Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

Gao, Hongyan; Yan, Fengyuan; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Junxi

doi:10.1016/j.apsusc.2008.10.018

Cited by 18 publications

(8 citation statements)

References 20 publications

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“…As is known, there are two main issues with respect to GaN-based heterostructures grown along the [0 0 0 1] direction: the large spontaneous polarization and the high dislocation density. To overcome or to reduce the effects of the polarization-induced electric field, growing nonpolar or semipolar films in which the growth direction is not (0 0 0 1) is required [4][5][6]. In particular, the absence of polarization fields in quantum systems grown in nonpolar directions and the associated reduction in the radiative lifetime with respect to devices grown in the (0 0 0 1) direction make these orientations promising for the production of more efficient light-emitting-diodes.…”

Section: Introductionmentioning

confidence: 99%

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

González‐Hernández

González-García

Barragan-Yani

et al. 2014

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

González‐Hernández

González-García

Barragan-Yani

et al. 2014

Applied Surface Science

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“…According to the earlier research regarding a-plane GaN growth, it has been reported that the unequal growth rates bring anisotropic structural characteristics. 6) Therefore, the stripe features along the [0001] direction were observed on the surface morphology of the a-plane GaN, and the anisotropic full width at half maximum (FWHM) was shown along the azimuth angle of the [11 20] !-scan measurement of the HRXRD. Figure 2 shows the HRXRD !-scans at the azimuth angles between 0 and 180 for the a-plane GaN grown on the CPSS and PSS.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3] Although the LEO and PE processes can dramatically eliminate most dislocations, these techniques are too complicated and time-consuming. In addition, other groups have studied direct LEO on a stripe-patterned sapphire substrate (PSS) to simplify the growth process, [4][5][6][7][8][9][10] but they could not obtain a mirror-like surface. In this paper, based on the growth of a-plane GaN and InGaN layers on a hemispherical PSS, we report both the enhancement of light emission and the reduction of the defects such as TDs and BSFs, which thus led to an improvement of the output power of the InGaN LED.…”

Section: Introductionmentioning

confidence: 99%

A Nonpolar a-Plane GaN Grown on a Hemispherical Patterned r-Plane Sapphire Substrate

Yoo

Park

Lim

et al. 2011

Jpn. J. Appl. Phys.

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A high-quality a-plane GaN layer with a pit-free, mirror-like surface was grown on a hemispherical patterned r-plane sapphire substrate (PSS) by metal–organic chemical vapor deposition. The use of the r-plane PSS reduced the density of defects such as basal plane staking faults and threading dislocations of the a-plane GaN. The low-temperature-photoluminescence intensity of the emissions at 3.25 and 3.39 eV related with the defects increased along with the near-band-edge emission at 3.46 eV. The intensity of yellow emission at 2.2 eV on the PSS was remarkably decreased, which indicates the improvement of the crystal quality because of the defect reduction. The InGaN light emitting diode grown on the PSS showed an output power of 7.4 mW at 100 mA, which was about 7 times higher than that on the planar substrate.

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“…All the elements in the μLED array were connected in parallel. The device was fabricated by employing nanostructured grating patterns, which improved the polarization ratio (PR) 110 . Figure 4(g) reveals that the output degree of polarization (DOP) of the semipolar μLED increased by 0.71 to favor liquid-crystal display applications.…”

Section: Optimization Of C-plane Epitaxial Structurementioning

confidence: 99%

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

Lu¹,

Lin²,

Guo³

et al. 2022

OES

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The evolution of next-generation cellular networks is aimed at creating faster, more reliable solutions. Both the next-generation 6G network and the metaverse require high transmission speeds. Visible light communication (VLC) is deemed an important ancillary technology to wireless communication. It has shown potential for a wide range of applications in next-generation communication. Micro light-emitting diodes (μLEDs) are ideal light sources for high-speed VLC, owing to their high modulation bandwidths. In this review, an overview of μLEDs for VLC is presented. Methods to improve the modulation bandwidth are discussed in terms of epitaxy optimization, crystal orientation, and active region structure. Moreover, electroluminescent white LEDs, photoluminescent white LEDs based on phosphor or quantum-dot color conversion, and μLED-based detectors for VLC are introduced. Finally, the latest high-speed VLC applications and the application prospects of VLC in 6G are introduced, including underwater VLC and artificial intelligence-based VLC systems.

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Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

Cited by 18 publications

References 20 publications

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

A comparative DFT study of the structural and electronic properties of nonpolar GaN surfaces

A Nonpolar a-Plane GaN Grown on a Hemispherical Patterned r-Plane Sapphire Substrate

High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

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