Growth of oxide thin films for optical gas sensor applications

Structural and gasochromic properties of epitaxial WO3 films prepared by pulsed laser deposition

“…In comparison with other deposition techniques, the PLD technique has a lot of advantages because the reactive conditions can be controlled easily by adjusting the gas partial pressure and the substrate temperature. However, there are many reports on polycrystalline WO 3 films [24][25][26] and very few reports on the epitaxial growth of WO 3 films by PLD [27,28] to our knowledge.…”

Applications of Ion Beam Irradiation in Multifunctional Oxide Thin Films: A Review

“…Transition semiconducting metal oxides (i.e., SnO 2 , ZnO, TiO 2 , MoO 3 , WO 3 , and In 2 O 3 ) have been extensively investigated for their potential application in sensors, such as oxygen sensor, carbon monoxide sensor, LPG sensor, nitrogen dioxide sensor, and so on. Also, the sensing of new energy sources such as hydrogen (H 2 ) and methane (CH 4 ) has been becoming a focus due to their low flammability limit of about 4% mol in the air, which means that greatly enhanced sensing response at a very low concentration is vitally important.…”

Investigation of structural and optical properties of UHV deposited titanium thin films under thermal oxidation

“…As known, control at the nano-scale of material structure during the synthesis process offers the possibility of designing high quality devices with improved and pre-defined performances. Nano-crystalline TiO 2 thin films have been prepared up to now by a large variety of growth techniques, such as metal-organic chemical vapor deposition (MOCVD) [22,23], reactive magnetron sputtering [24,25], sol-gel chemistry [26], filtered cathodic vacuum arc [27] and pulsed laser deposition (PLD) [28][29][30][31][32][33][34][35][36], and PLD has important advantages over other deposition methods. Through the appropriate adjustments of process parameters such as laser fluence, number of laser pulses, ambient reactive gas pressure and substrate temperature PLD allows for the precise control of the growth process and, thus, the synthesized thin films' crystalline structure, stoichiometry, thickness, as well as their adherence to the substrate surface [37][38][39], However, in general the TiO 2 films prepared by PLD mainly consisted of mixtures of crystal phases [30,[33][34][35], It was shown that the formation of pure, monophasic TiO 2 thin films of either rutile or anatase structure requires, besides the adjustment of the process parameters, special substrate materials ensuring small in-plane lattice mismatch at the films-substrate interface [28,36].…”