Growth of PbSe thin films on Si substrates by pulsed laser deposition method

Rumianowski, Roman; Dygdala, Roman S.; Jung, W.; Bała, W.

doi:10.1016/s0022-0248(02)02528-9

Cited by 41 publications

(15 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Generally, the composition and microstructure of the PbSe thin films can be varied by changing the preparation methods and corresponding parameters. Until now, the PbSe thin films have been successfully prepared by many chemical, electrochemical and physical methods, such as chemical bath deposition [17], electrochemical deposition [10], thermal evaporation [18], pulsed laser deposition [19] and molecular beam epitaxy [20], etc. In recent years, magnetron sputtering has been widely used to prepare semiconductor thin films due to its low cost, easy handling and high quality products compared with other preparation methods [21].…”

Section: Introductionmentioning

confidence: 99%

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

Sun

Gao

Pang

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

Lead selenide thin films with different microstructure were deposited on Si (100) substrates using magnetron sputtering at 50 °C, 150 °C and 250°C, respectively. The crystal structure of the sputtered PbSe thin films varies from the amorphous crystalline to columnar grain, and then to double-layer (nano-crystalline layer and columnar grain layer) structure as the deposition temperature increases, which is due to the dominating growth mode of the thin films changes from Frank-van der Merwe (or layer-by-layer) growth mode at 50 °C to Volmer-Weber (or 3D island) growth mode at 150 °C, and then to Stranski-Krastanow (or 3D island-on-wetting-layer) growth mode at 250 °C. The growth mechanism of the sputtered PbSe thin films is mainly dominated by the surface and strain energy contributions. Moreover, the strain energy contribution is more prominent when the deposition temperature is less than 180 °C, while, the surface energy contribution is more prominent when the deposition temperature is higher than 180 °C. The absorption spectra of the sputtered PbSe thin films are in 3.1 μm to 5 μm range. Besides, the sputtered PbSe thin film prepared at 250 °C has two different optical band gaps due to its unique double-layer structure. According to the theoretical calculation results, the variation of the band gap with the deposition temperature is determined by the shift of the valence band maximum with the lattice constant.

show abstract

Section: Introductionmentioning

confidence: 99%

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

Sun

Gao

Pang

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

show abstract

“…PbSe has wide applications in long and mid-wavelength infrared detectors, optical amplifiers, mid-infrared lasers, as thermoelectric materials, and as Pb 2+ ion selective sensors [ 4 – 7 ]. Among the various techniques used to prepare PbSe thin films, such as vacuum evaporation [ 8 ], microwave heating [ 9 ], pulsed laser deposition [ 10 ], electrochemical atomic layer epitaxy [ 11 ], and electrodeposition [ 12 ], the chemical bath deposition method [ 13 – 14 ] is relatively simple and cost-effective, and has the advantage that it allows control over deposition parameters such as the pH, the concentration of ions, deposition temperature, etc., with great ease.…”

Section: Introductionmentioning

confidence: 99%

Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

Begum¹,

Hussain²,

Rahman³

2012

Beilstein J. Nanotechnol.

108

View full text Add to dashboard Cite

SummaryNanocrystalline lead selenide (PbSe) thin films were prepared on glass substrates by a chemical bath deposition method, using sodium selenosulfate (Na2SeSO3) as a source of Se2− ions, and lead acetate as a source of Pb2+ ions. Trisodium citrate (TSC) was used as a complexing agent. PbSe films were prepared at various deposition temperatures while the pH value was kept fixed at 11, and the effect on the resulting film properties was studied by X-ray diffraction (XRD), X-ray fluorescence (XRF), scanning electron microscopy (SEM) and optical absorption studies. The structural parameters, such as the lattice constant (a), crystallite size (D), dislocation density (ρ) and microstrain (ε) were evaluated from the XRD spectra. It was found that average crystallite size, as calculated from Scherrer’s formula, increased from 23 to 33 nm as the deposition temperature was varied from 303 to 343 K. The dislocation density and microstrain were found to vary inversely with the crystallite size, whereas the lattice constant was found to increase with an increase in crystallite size. The optical absorption spectra of the nanocrystalline PbSe films showed a blue shift, and the optical band gap (E g ) was found to increase from 1.96 to 2.10 eV with the decrease in crystallite size.

show abstract

“…Several techniques are used for synthesis of PbSe, including the photochemical approach [18], sonochemical method [19], atomic layer epitaxy technique [20], pulsed laser deposition method [21], CBD approach [22], vacuum deposition method [23], electrodeposition technique [24], pulse sonochemical approach [25], SILAR [26], as well as aerosolassisted chemical vapor deposition (AACVD) [27]. Every method has its advantages and disadvantages, structure, and surface morphology; all optoelectronic features rely heavily on the preparation approaches.…”

Section: Introductionmentioning

confidence: 99%

Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach

et al. 2021

View full text Add to dashboard Cite

This research endeavor aimed to synthesize the lead (II) diphenyldiselenophosphinate complex and its use to obtain lead selenide nanostructured depositions and further the impedance spectroscopic analysis of these obtained PbSe nanostructures, to determine their roles in the electronics industry. The aerosol-assisted chemical vapor deposition technique was used to provide lead selenide deposition by decomposition of the complex at different temperatures using the glass substrates. The obtained films were revealed to be a pure cubic phase PbSe, as confirmed by X-ray diffraction analysis. SEM and TEM micrographs demonstrated three-dimensionally grown interlocked or aggregated nanocubes of the obtained PbSe. Characteristic dielectric measurements and the impedance spectroscopy analysis at room temperature were executed to evaluate PbSe properties over the frequency range of 100 Hz–5 MHz. The dielectric constant and dielectric loss gave similar trends, along with altering frequency, which was well explained by the Koops theory and Maxwell–Wagner theory. The effective short-range translational carrier hopping gave rise to an overdue remarkable increase in ac conductivity (σac) on the frequency increase. Fitting of a complex impedance plot was carried out with an equivalent circuit model (Rg Cg) (Rgb Qgb Cgb), which proved that grains, as well as grain boundaries, are responsible for the relaxation processes. The asymmetric depressed semicircle with the center lower to the impedance real axis provided a clear explanation of non-Debye dielectric behavior.

show abstract

Growth of PbSe thin films on Si substrates by pulsed laser deposition method

Cited by 41 publications

References 10 publications

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

Study on the growth mechanism and optical properties of sputtered lead selenide thin films

Effect of deposition temperature on the structural and optical properties of chemically prepared nanocrystalline lead selenide thin films

Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach

Contact Info

Product

Resources

About