Growth of PbTiO3 Thin Film on Si(100) with Y2O3 and CeO2 Buffer Layer

Wu, Ye–Min; Lo, Jyi-Tsong

doi:10.1143/jjap.37.4943

Cited by 14 publications

(6 citation statements)

References 24 publications

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“…4b acquired for the (222) lattice plane indicates a relatively high out-of-plane mosaicity of about 8° which shows that an important crystalline disorder exists. Preferential orientation along (111) has already been reported for Y 2 O 3 polycrystalline films obtained by various techniques 38,39 .Such texturing is a consequence of the minimization of free surface energy of the grains as well as a competitive growth between grains of different orientations as expected from a columnar growth model. We note that, although all films produced in this study displayed preferential texture, full (111)-texture was only obtained when a thin chemical silicon oxide layer (around 4 nm) was intentionally created by using an RCA cleaning procedure ending with an oxidation step.…”

Section: 1-structural and Morphological Characterization Of The Y2o3 Thin Filmsmentioning

confidence: 82%

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Harada

Ferrier

Serrano

et al. 2020

Journal of Applied Physics

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Rare earth ions hosted in solids are good candidates for quantum technologies due to their chemical stability and optical and spin transitions exhibiting long coherence lifetimes. While bulk oxide crystals are usually the preferred host material, the development of a scalable silicon-compatible thin film platform would be desirable. In this paper, we report on the growth of Y2(1−x)Eu2xO3 thin films on silicon in the full range of Eu3+ concentration by direct liquid injection chemical vapor deposition (CVD). Our sub-micrometer polycrystalline films with a strong-(111) texture were grown for all compositions into the bixbyite cubic phase. The variation of growth rates with temperature and flow indicated that deposition occurred through a mass-transport controlled regime. Optical assessment of the Eu-doped thin films showed inhomogeneous linewidths as narrow as 50 GHz and fluorescence lifetimes of 1 ms for the lowest concentrations. Finally, a spectral hole was successfully burned in a 200 nm-thin film with a 2% Eu doping leading to a homogeneous linewidth of 11 MHz. These values are still below those reported for bulk single crystals indicating that additional decoherence mechanisms exist in such nanometric films, which might be alleviated by further improvement of the crystalline quality. Nevertheless, these results pave the way to the use of CVD-grown Eu:Y2O3 thin films as a platform for integrated quantum devices.

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Section: 1-structural and Morphological Characterization Of The Y2o3 Thin Filmsmentioning

confidence: 82%

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Harada

Ferrier

Serrano

et al. 2020

Journal of Applied Physics

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show abstract

“…Many groups growing PTO films by PVD techniques with a single PTO target attempt to prevent the Pb deficiency with strategies that can be categorized into two, namely, to mitigate the re-evaporation of Pb from the growing film or to supply species with an excess Pb/Ti ratio onto the substrate to compensate for the Pb loss. The practical deposition conditions based on the former strategy include (a) low substrate temperature (550 • C or lower) [6][7][8], and (b) high oxygen ambient pressure (100 mTorr or higher) [7,[9][10][11][12][13][14]. A 2 of 11 common strategy for the latter category is (c) to use a Pb-rich target [6,7,10,15], although the exact amount of Pb in excess will depend on the deposition conditions.…”

Section: Introductionmentioning

confidence: 99%

“…The practical deposition conditions based on the former strategy include (a) low substrate temperature (550 • C or lower) [6][7][8], and (b) high oxygen ambient pressure (100 mTorr or higher) [7,[9][10][11][12][13][14]. A 2 of 11 common strategy for the latter category is (c) to use a Pb-rich target [6,7,10,15], although the exact amount of Pb in excess will depend on the deposition conditions.…”

Section: Introductionmentioning

confidence: 99%

Pulsed Laser Deposition of Epitaxial Non-Doped PbTiO3 Thin Films from PbO–TiO2 Mosaic Targets

et al. 2021

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PbTiO3 (PTO) suffers from difficulty in preparing high-density robust bulk ceramics, which in turn has been a bottleneck in thin films growth with physical vapor deposition (PVD) methods. In the present work, we prepared non-doped PTO thin films by a pulsed laser deposition (PLD) method with either a single PTO target or a mosaic target consisting of PbO and TiO2 pie-shaped pieces. On the PTO single target, laser irradiation caused selective ablation of Pb, resulting in Ti-rich cone-shaped pillar structure on the surface, whereas the irradiated surface of PbO and TiO2 pieces was smoother. Epitaxial PTO films deposited on SrTiO3 (001) substrates from the pie-chart targets with PbO:TiO2 areal ratio from 3:5 to 5:3 resulted in composition, crystallinity, flatness, and ferroelectric properties almost independent of the areal ratio. The averaged composition of each film was close to stoichiometric, suggesting a compositional self-control mechanism. For growing epitaxial and high-quality non-doped PTO films, a PbO–TiO2 pie-chart target is advantageous in easiness of handling and stable surface structure.

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“…Cerium dioxide (CeO 2 ) appears to be a particularly attractive candidate, given its high dielectric constant (ε r ≈ 25) and its compatibility with Si. In the solid state ionics arena, there is much interest in reducing the operating temperatures of solid state oxide fuel cells (SOFC) by shifting from bulk to thin film electrolytes (stabilized ZrO 2 or acceptor doped CeO 2 ) [1,2]. The lattice constant mismatch between diamond-structured silicon and fluorite-structured CeO 2 is only about 0.35%, thus * To whom all correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Electronic Conductivity and Dielectric Properties of Nanocrystalline CeO2 Films

2004

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The growth of dielectric layers on silicon substrates has attracted a great deal of recent interest given their potential applicability in the fabrication of high quality silicon-on-insulator (SOI) structures, high density capacitor devices, and stable buffer layers between silicon and other materials. In this study, nanocrystalline CeO 2 films were deposited on n-type (100) silicon substrates using pulsed laser deposition (PLD) to form a gate dielectric for a Pt/n-Si/CeO 2 /Pt MOS device. XRD, AFM and FESEM measurements were used to characterize the crystal structure and grain size of the CeO 2 films. The electrical properties of the device structure were examined by capacitance-voltage (C-V) and impedance spectroscopy measurements. The CeO 2 films exhibited an activated conductivity, characterized by an activation energy E a = 0.45 eV. An estimated room temperature electron mobility µ e of 2.8 × 10 −7 cm 2 /Vs leads to a corresponding electron concentration n of 5.5 × 10 17 cm −3 . In contrast to conventional MOS capacitors, we find an additional capacitive contribution under strong accumulation conditions as a result of space charge effects inside the CeO 2 thin film.

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Growth of PbTiO₃ Thin Film on Si(100) with Y₂O₃ and CeO₂ Buffer Layer

Cited by 14 publications

References 24 publications

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Chemically vapor deposited Eu3+:Y2O3 thin films as a material platform for quantum technologies

Pulsed Laser Deposition of Epitaxial Non-Doped PbTiO3 Thin Films from PbO–TiO2 Mosaic Targets

Electronic Conductivity and Dielectric Properties of Nanocrystalline CeO2 Films

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