Growth of Ru/RuO2 layers with atomic vapor deposition on plain wafers and into trench structures

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

“…23-25 and 34-38͒ and even that of RuO 2 ͑5.0− 5.3 eV͒. [35][36][37][38][39][40][41][42] However, the large WF shift corresponds very well with Nabatame et al's report, 22 which shows a V fb shift of ϳ1 V for both Ru/ SiO 2 and Ru/ HfO 2 gated stacks after thermal treatment in O 2 .…”

“…The idea is based on the fact that the layer in contact with the gate dielectric is critical to set the WF of metal gates. It is widely reported that RuO x has a higher WF than Ru does, [35][36][37][38]44,45 and it is also known that oxygen adsorption at the Ru outer surface can increase its WF. 34,46 It is possible that the formation of a thin interfacial RuO x layer will lead to a higher WF and the shift of the V fb .…”

Atomic Layer Deposition of Ru Thin Films Using a Ru(0) Metallorganic Precursor and O2

“…It also gives a high process controllability and large-area uniformity because ALD employs a self-limiting film growth mode through surface-saturated reactions. 4,5 In the past years, Ru films have been grown by ALD from a variety of precursors, including cyclopendadienyl (Cp)-based Ru precursors such as bis(cyclopentadienyl)Ru(II) [RuCp 2, Ru(C 5 H 5 ) 2 ] 6-9 and bis(ethylcyclopentadienyl)Ru(II) [Ru(EtCp) 2 , Ru(C 2 H 5 C 5 H 4 ) 2 ], [9][10][11][12][13] β-diketonate Ru precursors of tris(tetramethylheptane-dionate)Ru (III) [Ru(thd) 3, Ru(C 11 H 19 O 2 ) 3 ] 14 or tris(acetylacetonato)Ru (III) [Ru(acac) 3 , Ru (C 5 H 7 O 2 ) 3 ], 15 and O 2 molecules as reactants. These films showed excellent properties, such as a low resistivity of 10 ∼ 20 μ -cm, ∼ 100% step coverage in high-aspect ratio structures, and low impurity levels of C and O.…”

High Temperature Atomic Layer Deposition of Ruthenium from N,N-Dimethyl-1-ruthenocenylethylamine

“…The development of micro-and nanoelectronic device generations has driven the search for advanced deposition processes, enabling the growth of thin metal layers [1][2][3] applicable as electrodes in memory capacitors and field-effect transistors. Efforts have been made to integrate high work-function metals, in particular ruthenium, [3][4][5][6][7][8][9] with the gate and memory capacitor technologies.…”

“…Ru films have been grown by ALD and related techniques from a variety of precursors, such as Ru͑acac͒ 3 and Ru͑thd͒ 3 ; 2,16,17 bis͑2,2,6,6-tetramethyl-3,5-heptanedionato͒͑1,5-cyclooctadiene͒Ru, i.e., Ru͑thd͒ 2 COD; 5 bis͑N,NЈ-di-tert-butylacetamidinato͒ruthe-nium͑II͒dicarbonyl, i.e., Ru͑ t Bu-Me-amd͒ 2 ͑CO͒ 2 ; 18 ruthenocenes: dicyclopentadienylruthenium, RuCp 2 , [19][20][21] bis͑ethylcyclopentadi-enyl͒ruthenium, Ru͑EtCp͒ 2 ; 21,22 and ͑cyclopentadienyl͒͑isopropyl-cyclopentadienyl͒ruthenium, CpRu͑i-PrCp͒. 7 In most cases, processes at rather low deposition temperatures, not exceeding 300-350°C, 5,16,18,19,21 have been realized and reported.…”