Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique

Frank, C.; Hein, K. R. G.

doi:10.1002/crat.2170300703

Cited by 6 publications

(1 citation statement)

References 13 publications

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“…[7,11] Equipment: The newly developed VGF-RMF equipment is schematically drawn in Figure 1. The furnace was especially designed for the vapour-pressure controlled VGF technique in a closed ampoule [8] under optimised thermal conditions. It is characterised by a modular, axisymmetric set-up of seven heating zones.…”

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confidence: 99%

New Developments in Vertical Gradient Freeze Growth

et al. 2004

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The Vertical Gradient Freeze (VGF) technique is an important method for growing high quality compound semiconductors such as GaAs. Results obtained with a novel VGF set‐up developed for the growth under influence of a rotating magnetic field (RMF) and under vapour pressure control are presented in this paper. The RMF is shown to be a powerful tool to affect the heat and mass transport within the melt in a definite way. In GaAs:Si growth, RMF induced flow results in a decreased curvature of a nominally concave‐shaped interface, i.e., it contributes to an axial heat transfer at the solid‐liquid interface. The axial dopant segregation of Ga in Ge is found to be improved under continuous RMF action due to better mixing of the melt. The set‐up also allowed to determine the influence of carbon and the arsenic vapour pressure on the dopant incorporation and crystal quality.

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New Developments in Vertical Gradient Freeze Growth

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Incorporation of Carbon by VGF-Growth of GaAs

Hannig

Buhrig

Gärtner

1999

Cryst. Res. Technol.

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Cryst. Res. Technol. 34 1999 2 189-195 <100> oriented GaAs single crystals with carbon concentrations in the range of 10 14 to 10 16 cm -3 were grown by the vertical Gradient-Freeze-Method (VGF) in sealed quartz glass ampoules. The stable isotope 13 C was used as doping material. Because of the application of carbon isotopes it is possible to distinguish between the carbon contained in the starting material ( 12 C) and the incorporation from the gaseous phase ( 13 C). The carbon concentration on the arsenic sublattice site was investigated by FTIR spectroscopy from absorption of local modes.<100> orientierte GaAs Einkristalle mit Kohlenstoffkonzentrationen im Bereich von 10 14 bis 10 16 cm -3 wurden in geschlossenen Ampullen mit dem vertikalen Gradient Freeze Verfahren (VGF) gezüchtet. Als Dotierstoff wurde das stabile Isotop 13 C verwendet. Durch den Einsatz von Kohlenstoffisotopen kann zwischen dem im Ausgangsmaterial ( 12 C) enthaltenen und den über die Gasphase eingebauten Kohlenstoff ( 13 C) unterschieden werden. Die C As -Konzentration der gezüchteten Kristalle wurde mit Hilfe der FTIR-Spektroskopie aus der Lokalmodenabsorption bestimmt.

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Growth of GaAs Crystals by VGF at Different As Source Temperatures

Frank

Hein

Hannig

et al. 1996

Cryst. Res. Technol.

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The influence of the As source temperature on the properties of undoped (100) orientated GaAs crystals during VGF crystal growth was investigated in the range of T h = 600 to 631 "C. The crystal morphology has shown significant differences. A monocrystalline growth is observed in the range of T A~ = 607 to 620 "C. The EPD values are in the range of lo3 cm-' irrespective of the preset temperature of the As source. A decrease in the As source temperature from 620°C to 607 "C will result in a reduced concentration of the intrinsic defect EL2 from 0.8 . 1 0 "~m -~ to 0.6 . ~r n -~.Der Einflui3 der As Quellentemperatur auf die Eigenschaften von undotierten, (100)orientierten GaAs Kristallen bei der VGF Ziichtung wurde im Bereich von T A~ = 600-631 "C untcrsucht. Die Kristallmorphologie wies dabei deutliche Unterschiede auf. Bei Tas von 607-620 "C wird einkristallines Wachstum beobachtet. Die EPD Werte liegen dabei im Bereich von lo3 cm-' unabhiingig von der eingestellten Temperatur der AsQuelle. Mit Verringerung der As Quellentemperatur von 620 "C auf 607 "C tritt eine Reduzierung der Konzentration des Eigendefektes EL2 von 0,8 . 10IG cm-3 auf 0,6 . 10I6 cm-3 ein.

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Growth of Semiinsulating GaAs Crystals by Vertical Gradient Freeze Technique

Cited by 6 publications

References 13 publications

New Developments in Vertical Gradient Freeze Growth

New Developments in Vertical Gradient Freeze Growth

Incorporation of Carbon by VGF-Growth of GaAs

Growth of GaAs Crystals by VGF at Different As Source Temperatures

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