Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition

Седов, В. С.; Хомич, А. А.; Ralchenko, V.G.; Martyanov, Artem; Savin, Sergey; Poklonskaya, O. N.; Trofimov, N. S.

doi:10.6000/2369-3355.2015.02.02.1

Cited by 14 publications

(9 citation statements)

References 26 publications

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“…The natural abundance of Fe is also considerably higher than that of Ni and Co, but Fe has been calculated to be unstable in diamond 472 During CVD growth, there is potential for Si to be incorporated into the diamond, either unintentionally via contamination from the quartz optical windows on the reactor (Figure 7) or by intentionally doping by adding a trace of SiH4 to the process gas mixture. 484 Si can also be incorporated during HPHT growth and with ion implantation. The SiV 0 defect identified in EPR and confirmed with theory can also act as a trap for nitrogen, and the SiVN defect is believed to have been identified.…”

Section: Selected Aggregates Involving Nitrogen and Another Elementmentioning

confidence: 99%

“…During CVD growth, there is potential for Si to be incorporated into the diamond, either unintentionally via contamination from the quartz optical windows on the reactor (Figure ) or by intentionally doping by adding a trace of SiH 4 to the process gas mixture . Si can also be incorporated during HPHT growth and with ion implantation.…”

Section: Properties Of Nitrogen-doped Diamondmentioning

confidence: 99%

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Nitrogen in Diamond

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Nitrogen is ubiquitous in both natural and laboratory-grown diamond, but the number and nature of the nitrogen-containing defects can have a profound effect on the diamond material and its properties. An ever-growing fraction of the supply of diamond appearing on the world market is now lab-grown. Here, we survey recent progress in two complementary diamond synthesis methodshigh pressure high temperature (HPHT) growth and chemical vapour deposition (CVD), how each is allowing ever more precise control of nitrogen incorporation in the resulting diamond, and how the diamond produced by either method can be further processed (e.g. by implantation and/or annealing) to achieve a particular outcome or property. The burgeoning availability of diamond samples grown under well-defined conditions has also enabled huge advances in the characterization and understanding of nitrogen-containing defects in diamondalone, and in association with vacancies, hydrogen and transition metal atoms. Amongst these, the negatively charged nitrogen-vacancy (NV −) defect in diamond is attracting particular current interest on account of the many new and exciting opportunities it offers for, e.g., quantum technologies, nanoscale magnetometry and biosensing. 2 Laboratory Based Synthesis of Diamond and Nitrogen-Containing Diamond 2.1 High Pressure High Temperature (HPHT) Methods. Nature was the inspiration for the HPHT method, by which diamond growth was demonstrated by Swedish company ASEA in 1953 (though not reported at that time) and subsequently by US company General Electric in 1955. 14 , 15 Most present-day HPHT synthesis exploits the temperature-gradient growth (TGG) method developed later in that decade. 16 However, it took many further years before the design and control of HPHT reactors yielded diamonds of

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Section: Selected Aggregates Involving Nitrogen and Another Elementmentioning

confidence: 99%

Section: Properties Of Nitrogen-doped Diamondmentioning

confidence: 99%

Nitrogen in Diamond

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“…The following range of growth conditions was tested: pressures of 50-65 Torr, and microwave power of 4.4-5 kW. The substrate temperature was measured through a top window with a Micron M770 two-beam pyrometer and was kept at 850 ± 25 • C. The laser interferometry technique was used to control the in situ thickness and growth rate of PCD film (λ exc = 655 nm) [39] to estimate the growth time needed to complete the formation of 100-µm-thick PCD film. By the slight adjustment of the growth parameters (MW power and gas pressure), the growth rate was targeted at~1 m per hour in order to obtain PCD films of high quality, so 100-hour deposition runs were used to obtain each sample.…”

Section: E-field Calculationsmentioning

confidence: 99%

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

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In this work, the substrate holders of three principal geometries (flat, pocket, and pedestal) were designed based on E-field simulations. They were fabricated and then tested in microwave plasma-assisted chemical vapor deposition process with the purpose of the homogeneous growth of 100-μm-thick, low-stress polycrystalline diamond film over 2-inch Si substrates with a thickness of 0.35 mm. The effectiveness of each holder design was estimated by the criteria of the PCD film quality, its homogeneity, stress, and the curvature of the resulting “diamond-on-Si” plates. The structure and phase composition of the synthesized samples were studied with scanning electron microscopy and Raman spectroscopy, the curvature was measured using white light interferometry, and the thermal conductivity was measured using the laser flash technique. The proposed pedestal design of the substrate holder could reduce the stress of the thick PCD film down to 1.1–1.4 GPa, which resulted in an extremely low value of displacement for the resulting “diamond-on-Si” plate of Δh = 50 μm. The obtained results may be used for the improvement of already existing, and the design of the novel-type, MPCVD reactors aimed at the growth of large-area thick homogeneous PCD layers and plates for electronic applications.

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“…The growth rate of diamond was measured in situ with a laser interferometry technique [ 43 , 44 ]. The laser beam (λ = 650 nm) was directed almost perpendicularly to the growing surface through the top quartz window of the CVD reactor.…”

Section: Methodsmentioning

confidence: 99%

Thin Diamond Film on Silicon Substrates for Pressure Sensor Fabrication

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Thin polycrystalline diamond films chemically vapor deposited on thinned silicon substrates were used as membranes for pressure sensor fabrication by means of selective chemical etching of silicon. The sensing element is based on a simple low-finesse Fabry–Pérot (FP) interferometer. The FP cavity is defined by the end-face of a single mode fiber and the diamond diaphragm surface. Hence, pressure is evaluated by measuring the cavity length by an optoelectronic system coupled to the single mode fiber. Exploiting the excellent properties of Chemical Vapor Deposition (CVD) diamond, in terms of high hardness, low thermal expansion, and ultra-high thermal conductivity, the realized sensors have been characterized up to 16.5 MPa at room temperature. Preliminary characterizations demonstrate the feasibility of such diamond-on-Si membrane structure for pressure transduction. The proposed sensing system represents a valid alternative to conventional solutions, overcoming the drawback related to electromagnetic interference on the acquired weak signals generated by standard piezoelectric sensors.

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Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition

Cited by 14 publications

References 26 publications

Nitrogen in Diamond

Nitrogen in Diamond

Effect of Substrate Holder Design on Stress and Uniformity of Large-Area Polycrystalline Diamond Films Grown by Microwave Plasma-Assisted CVD

Thin Diamond Film on Silicon Substrates for Pressure Sensor Fabrication

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