Low energy Ag ions were implanted into silicon and annealed at different
temperatures in order to generate plasmonic active silicon hybrids. It was
found that as the ion fluence of irradiation was increased, a monotonic
decrease in the absorption spectra in the ultraviolet region occurs, due to
amorphization and macrostructuring of the Si surface. At the same time, the
optical spectra are characterized by a strong band after implantation
presenting the contribution of the surface plasmon resonance (SPR) of Ag
nanoparticles. After heat treatment at 500 and 600?C, the SPR peak shifts to
lower wavelengths, as compared to as implanted samples, whereas the plasmon
position shifts to higher wavelengths for annealing at 700?C. This
observation can be explained by either an out-diffusion of Ag or by stress
relaxation and recrystallization of silicon. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III 45005]