Growth of silicon carbide multilayers with varying preferred growth orientation

Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications - Part I Thermal and Plasma CVD

“…35 ✓SiC multilayered coatings with varying preferred growth orientations as hard coatings for biosensors and biological devices. 53,54 • Ultrafast Data Transmission and Processing:…”

“…Single Source Precursors: In terms of source precursors, thermal and PE-CVD predominantly use either inorganic perhydridosilanes or halosilanes as Si sources and hydrocarbons as C sources for the formation of SiCx. Silane (SiH4), 9,18,31,36,38,40,42,44,45,51 trichlorosilane (SiHCl3 or TCS), 38,57,58,60,61 and tetrachlorosilane (SiCl4) 37,47,[53][54][55][56][57] continue to be the most preferred Si precursors, while methane, acetylene, ethylene, and propane are the hydrocarbons most employed as C sources. 9,18,31,[36][37][38]40,42,44,45,47,51,[53][54][55][57][58][59] However, the universally established use of perhydridosilanes or halosilanes presents significant challenges that limit applicability in many emerging SiC applications which employ thermally, chemically, and/or electrically fragile substrates.…”

“…Silane (SiH4), 9,18,31,36,38,40,42,44,45,51 trichlorosilane (SiHCl3 or TCS), 38,57,58,60,61 and tetrachlorosilane (SiCl4) 37,47,[53][54][55][56][57] continue to be the most preferred Si precursors, while methane, acetylene, ethylene, and propane are the hydrocarbons most employed as C sources. 9,18,31,[36][37][38]40,42,44,45,47,51,[53][54][55][57][58][59] However, the universally established use of perhydridosilanes or halosilanes presents significant challenges that limit applicability in many emerging SiC applications which employ thermally, chemically, and/or electrically fragile substrates. As mentioned above, CVD SiC from perhydridosilanes or halosilanes necessitates significantly higher decomposition temperatures to yield SiC films with the target properties.…”