Growth of silicon nitride by nitridation of amorphous silicon at low temperature in hot-wire CVD

Kumar, Dharmendra; Solanki, Chetan Singh; Kavaipatti, Balasubramaniam

doi:10.1016/j.mssp.2017.05.015

Cited by 12 publications

(4 citation statements)

References 64 publications

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“…The reactivity of NDCA molecules on Si 3 N 4 grown via SuMBD is further evidenced by comparison of the substrate-specific N 1s core level spectra (Figure 2c). The NDCAfunctionalized Si 3 N 4 surface (upper panel in Figure 2c) exhibits a weak additional com-ponent (N B ) with respect to the etched Si 3 N 4 substrate (upper panel in Figure 2c) [31], corresponding to the surface nitrogen component that reacted with the NDCA molecule.…”

Section: Core Levelmentioning

confidence: 99%

Controlled Carboxylic Acid-Functionalized Silicon Nitride Surfaces through Supersonic Molecular Beam Deposition

Nardi,

Timpel,

Pasquardini

et al. 2023

Materials

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The functionalization of inorganic surfaces by organic functional molecules is a viable and promising method towards the realization of novel classes of biosensing devices. The proper comprehension of the chemical properties of the interface, as well as of the number of active binding sites for bioreceptor molecules are characteristics that will determine the interaction of the sensor with the analyte, and thus its final efficiency. We present a new and reliable surface functionalization route based on supersonic molecular beam deposition (SuMBD) using 2,6-naphthalene dicarboxylic acid as a bi-functional molecular linker on the chemically inert silicon nitride surface to further allow for stable and homogeneous attachment of biomolecules. The kinetically activated binding of the molecular layer to silicon nitride and the growth as a function of deposition time was studied by X-ray photoelectron spectroscopy, and the properties of films with different thicknesses were investigated by optical and vibrational spectroscopies. After subsequent attachment of a biological probe, fluorescence analysis was used to estimate the molecular layer’s surface density. The successful functionalization of silicon nitride surface via SuMBD and the detailed growth and interface analysis paves the way for reliably attaching bioreceptor molecules onto the silicon nitride surface.

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Section: Core Levelmentioning

confidence: 99%

Controlled Carboxylic Acid-Functionalized Silicon Nitride Surfaces through Supersonic Molecular Beam Deposition

Nardi,

Timpel,

Pasquardini

et al. 2023

Materials

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“…A schematic configuration for the HWCVD process is shown in Figure 7c, where the precursors decompose on the hot filament to produce the deposition species. [ 93 ] Significantly, HWCVD not only allows for improved control over the deposition parameters such as the deposition rate, but as the heating is largely confined to the wire, it allows for depositions at low substrate temperatures. Further advantages of HWCVD are [ 94 ] 1) the semiconductor films can be produced with higher deposition rates; 2) it enables more conformal deposition without any plasma‐induced damage; and 3) it allows for deposition of highly condensed films with low hydrogen content.…”

Section: Laser‐processed Planar Photonic Devicesmentioning

confidence: 99%

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored. In particular, flexible fabrication and postprocessing approaches that are compatible with different materials and allow for tuning of the components and systems are of great interest. Within this research area, laser thermal processing has emerged as an indispensable tool that can be applied to enhance and/or modify the material, structural, electrical and optical properties of group IV elemental and compound semiconductors at various stages of the production process. Herein, the recent progress made in the application of laser processing techniques to develop integrated semiconductor systems in both fiber‐ and planar‐based platforms is evaluated. Laser processing has allowed for the production of semiconductor waveguides with high crystallinity in the core and low optical losses, as well as postfabrication trimming of device characteristics and direct writing of tunable strain and composition profiles for bandgap engineering and optical waveguiding. For each platform, the current challenges and opportunities for the future development of laser‐processed integrated semiconductor photonic systems are presented.

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“…[5][6][7] For the tunnel passivated layer, SiO 2 is not the only option, and it has been confirmed that Si nitride (SiN x ) can also work well in passivated contact under appropriate conditions. 8) There are many methods to form thin tunnel SiN x films, such as sputtering, 9) jet vapor deposition, 10,11) atomic layer deposition, 12) plasma-enhanced chemical vapor deposition (PECVD), [13][14][15] and direct nitridation, 16,17) some of which have been conventionally used in the industry of semiconductor devices. 18,19) Of a variety of methods, catalytic CVD (Cat-CVD), often also referred to as hot-wire CVD, may be one of the best ways for the formation of thin tunnel SiN x .…”

Section: Introductionmentioning

confidence: 99%

Tunnel nitride passivated contacts for silicon solar cells formed by catalytic CVD

Wen

Ohdaira

2021

Jpn. J. Appl. Phys.

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An ultra-thin silicon nitride (SiN x ) layer formed by catalytic chemical vapor deposition (Cat-CVD) is used to replace the Si dioxide (SiO2) layer of a tunnel oxide passivated contact solar cell. The passivation quality of crystalline Si (c-Si) with a stack of the ultra-thin SiN x and n-type hydrogenated amorphous Si (a-Si:H) or microcrystalline Si (μc-Si:H), also formed by Cat-CVD, is significantly improved by annealing at 850 °C, probably due to the formation of a back surface field layer. Cat-CVD SiN x with thicknesses of up to 2.5 nm can have sufficient tunneling conduction. The ultra-thin SiN x having functions of surface passivation and carrier tunneling, and the unification of the formation method for the tunnel SiN x and conductive layers will lead to the realization of tunnel nitride passivated contact solar cells.

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Growth of silicon nitride by nitridation of amorphous silicon at low temperature in hot-wire CVD

Cited by 12 publications

References 64 publications

Controlled Carboxylic Acid-Functionalized Silicon Nitride Surfaces through Supersonic Molecular Beam Deposition

Controlled Carboxylic Acid-Functionalized Silicon Nitride Surfaces through Supersonic Molecular Beam Deposition

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Tunnel nitride passivated contacts for silicon solar cells formed by catalytic CVD

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