Growth of Single‐Crystalline Cubic GaN Nanotubes with Rectangular Cross‐Sections

Hu, Junqing; Bandô, Yoshio; Zhan, Jinhua; Xu, Fangfang; Sekiguchi, Takashi; Golberg, Dmitri

doi:10.1002/adma.200400016

Cited by 51 publications

(43 citation statements)

References 26 publications

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“…[27] However, the reaction temperature used in our reaction was considerably lower than those reported previously for GaN tubes. [3,[12][13][14][15] The as-prepared product was characterized by powder XRD and was found to be phase-pure wurtzite GaN (Fig. 2a).…”

Section: Synthesis and Characterization Of Gallium Nitridementioning

confidence: 99%

“…[21][22][23][24][25] GaN nanoparticles, [26][27][28] nanowires (nanorods), [22][23][24][25][26][29][30][31][32] nanobelts, [33] hollow spheres (spindles), [3,34] and tubes [3,[11][12][13][14][15] have been synthesized and characterized by many research groups. The tubular structures of amorphous, [13] polycrystalline, [3] and single-crystalline GaN [12][13][14][15] have been synthesized through various routes. In this Full Paper, we report the formation and characterization of sub-micrometer tubular GaN structures, consisting of highly oriented GaN nanoparticles.…”

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confidence: 99%

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Textured Tubular Nanoparticle Structures: Precursor‐Templated Synthesis of GaN Sub‐micrometer Sized Tubes

Ding

Lü

Zheng

et al. 2007

Adv Funct Materials

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Porous and sub‐micrometer tubes made of textured GaN nanoparticles have been synthesized by an in situ chemical reaction and characterized by X‐ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and photoluminescence (PL) and Raman spectroscopies. The in situ reaction involves thermal decomposition and nitridation of 1D gallium oxyhydroxide (GaOOH) at temperatures in the range of 700–900 °C. The 1D shape of the precursor GaOOH is maintained in the resultant GaN tubes. The GaN nanocrystals (estimated to be about 15 nm in size) are found to be highly oriented with respect to each other in the tube structure, with the [110] GaN direction parallel to the tube axis. The growth mechanism of the tube structure has also been studied. β‐Ga2O3 is found to be an intermediate phase between the starting GaOOH precursor and the final GaN product. The growth mechanism involves decomposition of GaOOH, which produces β‐Ga2O3 tubes with hollow interiors, and nitridation of β‐Ga2O3, which leads to growth of textured GaN nanocrystals. Based on the growth mechanism, tubular structures with either quasi‐circular or rectangular cross section are selectively synthesized by controlling the heating rate and calcination temperature. This in situ chemical reaction method provides a new route for synthesizing 1D hollow nanostructures.

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Section: Synthesis and Characterization Of Gallium Nitridementioning

confidence: 99%

mentioning

confidence: 99%

Textured Tubular Nanoparticle Structures: Precursor‐Templated Synthesis of GaN Sub‐micrometer Sized Tubes

Ding

Lü

Zheng

et al. 2007

Adv Funct Materials

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“…In fact, there have also been a small number of reported hexagonal [7] and squareshaped [8] nanotubes; however, these nanotubes are usually obtained by using a chemical-vapor deposition (CVD) approach. For example, Hu et al [9] reported the first growth of singlecrystalline c-GaN nanotubes with rectangular cross sections. These nanotubes were produced using Ga 2 O 3 powder and NH 3 as the source materials and were formed via a simple templateand catalyst-free high-temperature route.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Rectangular WO₃·H₂O Nanotubes Under Mild Conditions

Wang

Zhou

2007

Adv Funct Materials

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WO3·H2O nanotubes are successfully synthesized with the aid of intercalated polyaniline (PANI) under relatively mild conditions. More interestingly, the WO3·H2O nanotubes have a rectangular cross‐section structure formed through a rolling mechanism. Scanning electron microscopy, transmission electron microscopy, X‐ray diffraction, thermogravimetric analysis, Fourier‐transform infrared analysis, UV‐vis‐near‐IR spectroscopy, selected‐area electron diffraction, and vibrating‐sample magnetometry analysis are employed to characterize the morphology, structure, and properties of the nanotubes.

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“…12 Hu et al synthesized single crystalline cubic GaN nanotubes with rectangular cross sections. 10 Tellurium is a narrow-band gap semiconductor with a band gap energy of 0.35 eV. It has been considered to be an excellent candidate for use in future high-efficiency photoconductors, thermoelectric, and piezoelectric devices.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13] Much effort has been made in the past decade toward the study of carbon nanotubes with layered structures. 1,2 Recently, processing of inorganic nanotubes with nonlayered structures received significant interest.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Single Crystalline Tellurium Nanotubes with Triangular and Hexagonal Cross Sections

et al. 2005

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Single crystalline tellurium (Te) nanotubes with triangular cross sections were successfully synthesized for the first time by a simple approach of vaporizing tellurium metal and condensing the vapor in an inert atmosphere onto a suitable substrate. Tellurium gas was evaporated by heating at 350°C and was condensed on the Si (100) substrate at 150-200°C, in the downstream of argon (Ar) gas at a flow rate of 25 sccm for 10 min. This led to the production of nanotubes of triangular cross section along with some hexagonal ones. The formation of the nanotubes was highly dependent upon the structure of the substrate surface, Ar gas flow rate, and the deposition temperature. When the substrate is Si (111) or sapphire (0001) or when the argon flow rate is increased to 500 sccm, nanowires and nanorods were exclusively formed. Irrespective of the morphologies, all the observed Te nanostructures grew in a regular [0001] direction. The facile approach to nanotubes with a triangular cross section may facilitate some new applications as well as stimulate theoretical studies pertaining to the stability of this high-energy configuration.

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Growth of Single‐Crystalline Cubic GaN Nanotubes with Rectangular Cross‐Sections

Cited by 51 publications

References 26 publications

Textured Tubular Nanoparticle Structures: Precursor‐Templated Synthesis of GaN Sub‐micrometer Sized Tubes

Textured Tubular Nanoparticle Structures: Precursor‐Templated Synthesis of GaN Sub‐micrometer Sized Tubes

Preparation of Rectangular WO₃·H₂O Nanotubes Under Mild Conditions

Synthesis of Single Crystalline Tellurium Nanotubes with Triangular and Hexagonal Cross Sections

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Growth of Single‐Crystalline Cubic GaN Nanotubes with Rectangular Cross‐Sections

Cited by 51 publications

References 26 publications

Textured Tubular Nanoparticle Structures: Precursor‐Templated Synthesis of GaN Sub‐micrometer Sized Tubes

Textured Tubular Nanoparticle Structures: Precursor‐Templated Synthesis of GaN Sub‐micrometer Sized Tubes

Preparation of Rectangular WO3·H2O Nanotubes Under Mild Conditions

Synthesis of Single Crystalline Tellurium Nanotubes with Triangular and Hexagonal Cross Sections

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Preparation of Rectangular WO₃·H₂O Nanotubes Under Mild Conditions