2012
DOI: 10.1063/1.4773555
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Growth of SrTiO3(110) film by oxide molecular beam epitaxy with feedback control

Abstract: By controlling the growth of complex oxide films with atomic precision, emergent phenomena and fascinating properties have been discovered, and even been manipulated. With oxide molecular beam epitaxy (OMBE) we grow high-quality SrTiO3(110) films by evaporating Sr and Ti metals with separate controls of the open/close timing of the shutters. The incident electron beam angle of the reflective high energy electron diffraction (RHEED) is adjusted to make the (01) beam sensitive to surface chemical concentration. … Show more

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Cited by 13 publications
(5 citation statements)
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“…Moreover, if an atomic-layer-by-layer 1 (ALL-MBE) synthesis mode is achieved, one can terminate the film growth at a desired atomic layer, as well as study the effects of epitaxial strain, proximity effects in heterostructures, etc. But this comes at the expense of substantial technical sophistication and challenges, and hence just a few systems in which complex-oxide MBE synthesis is integrated under ultra-high vacuum (UHV) conditions with ARPES 2,3,4,5,6,7,8 and/or STM 9 , have been built and operated so far.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, if an atomic-layer-by-layer 1 (ALL-MBE) synthesis mode is achieved, one can terminate the film growth at a desired atomic layer, as well as study the effects of epitaxial strain, proximity effects in heterostructures, etc. But this comes at the expense of substantial technical sophistication and challenges, and hence just a few systems in which complex-oxide MBE synthesis is integrated under ultra-high vacuum (UHV) conditions with ARPES 2,3,4,5,6,7,8 and/or STM 9 , have been built and operated so far.…”
Section: Introductionmentioning
confidence: 99%
“…1 The other critical growth factor is to maintain the surface reconstruction on the film. By such means, homoepitaxy of high quality STO polar films have been obtained in a 2D mode by molecular beam epitaxy [26][27][28]. However, a required high growth temperature (> 800 °C) generally limits the application of the method in heteroepitaxial growth due to the enhanced chemical interdiffusion.…”
mentioning
confidence: 99%
“…These are the signature of the high-quality layer-by-layer growth of the SrTiO 3 (111) film, although the oscillation of RHEED intensity during film growth, typically associating the layer-by-layer growth, is not observed. The case is similar to the layer-by-layer growth of SrTiO 3 (110) film when the RHEED incident angle was in a certain range making it to be sensitive to the surface microstructure rather than the atomic layer roughness 30 . The cross-sectional HRTEM also confirms the nice crystallinity of the (111) film with indistinguishable interface of the homoepitaxial structure, as shown in Fig.…”
Section: Resultsmentioning
confidence: 80%