Growth of Straight InAs-on-GaAs Nanowire Heterostructures

Messing, Maria E.; Wong‐Leung, Jennifer; Zanolli, Zeila; Joyce, Hannah J.; Tan, Hark Hoe; Gao, Qiang; Wallenberg, L. Reine; Johansson, Jonas; Jagadish, Chennupati

doi:10.1021/nl202051w

Cited by 51 publications

(52 citation statements)

References 42 publications

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“…Therefore, constraining GaAs and InAs segments to the wurtzite crystal phase is one solution to stabilize the droplet on flat facets and increase the vertical yield of InAs-on-GaAs nanowires [20]. The wurtzite crystal structure of arsenide compounds forms for high levels of supersaturation in the droplet [19,21].…”

Section: Introductionmentioning

confidence: 99%

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Beznasyuk¹,

Robin²,

Hertog³

et al. 2017

Nanotechnology

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We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-on-GaAs nanowires by further optimizing the growth parameters. We investigated the composition change at the interface by energy dispersive X-ray spectroscopy and the nanowire crystal structure by transmission electron microscopy. The nominal composition of the InAs segment is found to be In x Ga 1-x As with x=0.85 and corresponds to 6% of lattice mismatch with GaAs. Strain mapping performed by the geometrical phase analysis of high-resolution images revealed a dislocation-free GaAs/In 0.85 Ga 0.15 As interface. In conclusion, we successfully fabricated highly mismatched heterostructures, confirming the prediction that axial GaAs/In 0.85 Ga 0.15 As interfaces are pseudomorphic in nanowires below 40 nm diameter.

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Section: Introductionmentioning

confidence: 99%

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Beznasyuk¹,

Robin²,

Hertog³

et al. 2017

Nanotechnology

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“…One of the material systems of interest is the III-V heterostructure NWs containing Ga and In, e.g. axial sequential growth of InAs on GaAs [5][6][7]. Since a thermodynamic description of the ternary Au-In-Ga system is lacking in the literature, we aimed at investigating the phase equilibria in order to provide a thermodynamic assessment of this system and to understand the optimal growth condition of NWs.…”

Section: Introductionmentioning

confidence: 99%

The phase equilibria in the Au–In–Ga ternary system

Ghasemi

Lidin

Johansson

2014

Journal of Alloys and Compounds

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The phase equilibria of the Au-In-Ga system were investigated for the first time using Differential Thermal Analysis (DTA), X-Ray Diffractometry (XRD), Energy Dispersive Xray Spectroscopy (EDS) and Scanning Electron Microscopy (SEM). A new ternary phase (Au 2 InGa 2 ) with the hexagonal structure (P6 3 /mmc) was discovered which melts incongruently at 394 C. From the experimental results, several invariant reactions have been identified and discussed.

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“…Vapor-Liquid-Solid (VLS) growth [1] of mixed Ga, In containing III-V compound semiconductors [2] often involves gold as a solvent and hence the thermodynamics of the ternary system Au-In-Ga are interesting for the understanding of optimal growth conditions [3][4][5].…”

Section: Introductionmentioning

confidence: 99%