Growth of strained Si on high-quality relaxed Si1−xGex with an intermediate Si1−yCy layer

Lee, S. W.; Chueh, Yu‐Lun; Chen, L. J.; Chou, Li‐Wei; Chen, P. S.; Lee, M. H.; Tsai, Ming-Jinn; Liu, C. W.

doi:10.1116/1.1913679

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…We have fabricated high-quality relaxed SiGe films using an intermediate Si or Si 1-y C y layer [13,14]. The misfit dislocations induced by the SiGe overlayer were formed or confirmed at the interface of SiGe overlayers and the intermediate Si 1-y C y layers.…”

Section: Introductionmentioning

confidence: 99%

“…The misfit dislocations induced by the SiGe overlayer were formed or confirmed at the interface of SiGe overlayers and the intermediate Si 1-y C y layers. In the case of SiGe/Si 1-y C y /SiGe by employing C atoms of 1.4%, an array of misfit dislocations at the interface of the top SiGe and SiC layer was responsible for the release of mismatch strain on the top SiGe layer [14]; however, the dislocation loops in the intermediate Si layer of SiGe/Si/SiGe samples enhanced the relaxation in the SiGe overlayer [13]. Addition of C atoms in the inserted Si layer led to the SiGe/Si 1-y C y /SiGe films with a rough surface and increased the complexity of process integration.…”

Section: Introductionmentioning

confidence: 99%

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Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Sin-MOSFETs

Chen¹,

Lee²,

Lee³

et al. 2006

Semicond. Sci. Technol.

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An intermediate Si layer in Si 1-x Ge x film, replacing the conventionally compositional graded buffer layer, was used to fabricate a relaxed SiGe substrate of high quality. The intermediate Si layer changes the relaxation mechanism of the SiGe thin film via the generation of {3 1 1} dislocation loops. The {3 1 1} dislocation loops are formed in the intermediate Si layer to prompt a state of relaxation in the SiGe overlayer, provide the defects for trapping of threading dislocations (TDs) and leave a SiGe top layer with low dislocation density. For the SiGe/Si/SiGe samples, the residual strain and TDs on the top SiGe layer are independent of the SiGe underlayer thickness. With a 700 nm thick Si 0.8 Ge 0.2 overlayer, such a Si 0.8 Ge 0.2 /Si/Si 0.8 Ge 0.2 heterostructure with a smooth surface has a TD density of 8.9 × 10 5 cm −2 and 3% residual strain. Owing to the different main relaxation mechanisms in SiGe films, the surface root mean square roughness of this relaxed buffer with a low density of surface pits was measured to be about 3 nm, which is lower than that of the sample without any intermediate Si layer (13 nm). Relaxation of the SiGe overlayer depends on the thickness of the intermediate Si layer. Optimization on relaxation in the SiGe/Si/SiGe structure with an intermediate Si layer of 50 nm is done. Strained Si n-channel metal-oxide-semiconductor field effect transistors with various buffer layers were fabricated and examined. The effective electron mobility for the strained Si device with this novel substrate technology was found to be 80% higher than that of the Si control device. The SiGe thin films with the intermediate Si layer serve as good candidates for high-speed strained Si devices. The global strain in the Si channel with a SiGe/Si/SiGe buffer is still beneficial for short channel devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Sin-MOSFETs

Chen¹,

Lee²,

Lee³

et al. 2006

Semicond. Sci. Technol.

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Growth of high-quality relaxed SiGe films with an intermediate Si1−yCy layer for strained Si n-MOSFETs

Chen

Lee

Liao

2006

Materials Science and Engineering: B

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Boron-Induced Strain Relaxation in Hydrogen-Implanted SiGe/Si Heterostructures

Lee

Chueh

Chang

2009

J. Electrochem. Soc.

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The strain relaxation behavior of H-implanted normalSi0.8normalGe0.2∕Si heterostructures containing a B-doped Si buffer layer was investigated. The annealed H-implanted SiGe/Si samples with a B-doped Si buffer layer exhibit an additional relaxation compared to those with an undoped Si buffer layer. At an annealing temperature of 900°C, relaxation ratios of the H-implanted samples with and without a B-doped Si buffer layer were determined to be 79 and 53%, respectively. The increased relaxation can be attributed to the formation of the larger H-filled bubbles along the interface on both sides of the B-doped Si region. Such an annealed H-implanted SiGe/B-doped Si heterostructure was further demonstrated to have a threading dislocation density of 4.7×105cm−2 with a root-mean-square roughness of only 0.48 nm. This work offers an effective approach to fabricate high quality strain-relaxed thin SiGe epilayers for high mobility device applications.

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Growth of strained Si on high-quality relaxed Si1−xGex with an intermediate Si1−yCy layer

Cited by 3 publications

References 15 publications

Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Sin-MOSFETs

Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Sin-MOSFETs

Growth of high-quality relaxed SiGe films with an intermediate Si1−yCy layer for strained Si n-MOSFETs

Boron-Induced Strain Relaxation in Hydrogen-Implanted SiGe/Si Heterostructures

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