Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

Attractive electron mobility in (113) n-type phosphorus-doped homoepitaxial diamond

“…The three samples present comparable phosphorus concentration around 1-2x10 18 at/cm 3 . For the (113) sample, this value is in between our previous reported values, 7x10 16 and 3x10 19 at/cm 3 , for non-intentionally doped (113) homoepilayers grown with similar MPCVD conditions [13]. The phosphorus atoms incorporated in the non-intentionally doped layers are not coming from the gas line but from the reactor itself.…”

“…Lying in between ( 111) and (100) [10], ( 113) is a stable growth orientation during chemical vapor deposition (CVD) [11] and could allow obtaining enlarged crystals [12]. The high potential of the ( 113) orientation was revealed recently thanks to the works of Lesik et al [10] and Tallaire et al [13]. For achieving a given film thickness together with a dedicated doping level, a wide growth window is a precious advantage.…”

“…For achieving a given film thickness together with a dedicated doping level, a wide growth window is a precious advantage. Tallaire et al [13] show that the use of ( 113) orientation substrates for p-type boron doped diamond homoepitaxy allows extension of the optimal MPCVD growth window, compared to conventional (100) orientation (ex: higher growth temperatures and growth rates). Moreover, the (113) p-type doping has been reached with homoepilayers presenting high crystalline quality whatever the layer thicknesses, varying from a few hundred of micrometers to free-standing plates.…”

Study of cracks formation in HIGHLY – low boron-doped epitaxial (113) diamond bilayers

“…Yet many scientific and technical issues must be resolved before the realization of reliable diamond electronic devices. Recent studies have demonstrated the interest in (113) epitaxial diamond layers in the fabrication of diamond electronic devices as this crystalline orientation offers better surface morphology, higher growth rate, high boron incorporation efficiency, lower surface roughness and defect-free surface in comparison with (100) and ( 111) orientations [1][2][3]. The fabrication process of semi-vertical diamond Schottky diodes requires the growth of epitaxial doped diamond bilayer with low and high dopant concentrations, which is the second necessary step in fabricating diamond electronic devices like Schottky diodes.…”

Oxygenated (113) diamond surface for nitrogen-vacancy quantum sensors with preferential alignment and long coherence time from first principles

“…Recent reports showed that (113) diamond surface could be a potential substrate to produce NV center. [25][26][27][28][29] The (113) surface can be successfully synthesized through laser cutting and polishing a standard (001) surface with a 29.5° angle towards <111> direction. Previous theoretical calculation confirms the 2×1 reconstructed (113) surface is more energetically favorable than (001) 2×1 surface.…”