IEEE Symposium Conference Record Nuclear Science 2004.
DOI: 10.1109/nssmic.2004.1466863
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Growth of thick CdTe films by close-space-sublimation technique

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Cited by 3 publications
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“…As the distance between the source and substrate increased at low pressures, the growth rate was reported to decrease due to the divergence of the gas. Research works by Nagayoshi and Suzuki observed that the deposition rate increased as the source temperature increased for a deposition under vacuum, in agreement with a sublimation limited case [22]. They also varied the substrate temperature showing for a source temperature of 650°C and a substrate temperature of 520°C, the growth rate reached maximum in that case.…”
Section: Deposition Of Cdte Thin Films By Close-spaced Sublimation (Css) Techniquesupporting
confidence: 68%
“…As the distance between the source and substrate increased at low pressures, the growth rate was reported to decrease due to the divergence of the gas. Research works by Nagayoshi and Suzuki observed that the deposition rate increased as the source temperature increased for a deposition under vacuum, in agreement with a sublimation limited case [22]. They also varied the substrate temperature showing for a source temperature of 650°C and a substrate temperature of 520°C, the growth rate reached maximum in that case.…”
Section: Deposition Of Cdte Thin Films By Close-spaced Sublimation (Css) Techniquesupporting
confidence: 68%