Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

Growth of thick GaN layers on 4‐in. and 6‐in. silicon (111) by metal‐organic vapor phase epitaxy

“…Its RMS surface roughness is 1.1 nm and its threading dislocations density is 2×10 9 cm -2 , the latter being corroborated by the According to our experience, 4 µm of GaN#2 represent the upper limit to yield crack free structures that contain a single AlN interlayer. To further increase the crack free thickness, it will be probably necessary to add a second AlN interlayer as already done in a previous work [7]. The three optimizations discussed in this paper in combination with the use of two AlN interlayers may be the right key to reach continuous final GaN thicknesses of 5 µm and above.…”

“…Two of the most efficient solutions are first, the insertion of SiN interlayers [3][4][5] that reduce the threading dislocations density and second, the insertion of one (or of several) AlN interlayers to grow GaN under compressive strain and thus reduce the tensile strain generated during cooling down [4,6]. In a previous work, we have shown that by using two AlN interlayers, 3 µm thick continuous GaN layers can be grown crack-free [7]. In the present work we show that the thickness of the final continuous GaN layer can be further increased by improving the growth conditions, and by using one AlN interlayer, only.…”

Исследование сегрегации сурьмы при эпитаксиальном росте на подложках Si с различной кристаллографической ориентацией

“…Однако использование подложек с кристаллографической ориентацией, отличной от (001), может обеспечить некоторые преимущества, такие как увеличение подвижности носителей заряда [10,11], изме-нение зонной структуры и спиновых свойств структур, сформированных на высокоиндексных подложках [12]. В настоящее время пластины Si с ориентацией (111) успешно используются для выращивания на кремнии полупроводников типа A III N [13,14]. Кроме того, для некоторых приборных приложений ориентация Si(111) оказывается наиболее предпочтительной в силу макси-мально плотной упаковки атомов Si.…”

Self-generated microcracks in an ultra-thin AlN/GaN superlattice interlayer and their influences on the GaN epilayer grown on Si(110) substrates by metal–organic chemical vapor deposition

“…To overcome the crack problem, relaxation structures trying to compensate the CTE-induced tensile strain during the cooling down process after the growth have been proposed and the crack-free thick GaN and the device operations grown on Si substrates have been demonstrated. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] Among the proposed relaxation structures, an ultra-thin AlN/GaN superlattice interlayer (SL IL) structure shows an unique feature because it makes use of the naturally generated micro-crack (MC) during the cooling down process in the SL IL to compensate the CTE-induced tensile strain in the plasma-assisted molecular beam epitaxy (rf-MBE). 18,19 As a result, a crack-free 4 µm thick continuous GaN epilayer grown on a Si(110) substrate has been realized by rf-MBE.…”