Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing

Koyama, Koji; Martin, D.; Ikejiri, Kenjiro; Aoyagi, Tomohide; Takeuchi, Misaichi; Kim, Seong-Woo; Aida, Hideo; Aota, Natsuko; Grandjean, N.

doi:10.7567/apex.6.035502

Cited by 12 publications

(2 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To minimize these dislocations, there is need for a crystal growth method that reduces bowing. Internally focused laser processing , using a polycrystalline GaN film on the back side of the substrate , and GaN growth on a GaN substrate are effective methods of reducing bowing. Hence, we carried out HVPE growth on GaN substrates.…”

Section: Resultsmentioning

confidence: 99%

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

Hashimoto

Yamane

Okada

et al. 2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

In this article, we present a semipolar {20–21} GaN layer and {20–2–1} GaN layer for large GaN substrates. The {20–21} GaN layer was fabricated on {22–43} patterned sapphire substrates (PSSs) by metal‐organic vapor‐phase epitaxy (MOVPE) and hydride vapor‐phase epitaxy (HVPE). We found that the surface roughening and crack generation during the HVPE growth were suppressed by the formation of SiO2‐striped masks parallel to the c‐axis on the MOVPE‐grown {20–21} GaN template. Furthermore, we demonstrated millimeter‐thick crystal growth on a {20–21} GaN layer and a {20–2–1} GaN layer on a GaN substrate using HVPE. The dark‐spot density in the {20–2–1} GaN layer was approximately 9.6 × 106 cm−2 for 960 min growth. The dark‐spot density in the {20–2–1} GaN layer decreased more rapidly than that in the {20–21} GaN layer as growth thickness increased.

show abstract

Section: Resultsmentioning

confidence: 99%

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

Hashimoto

Yamane

Okada

et al. 2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Laser lift‐off technique (LLO) is a common method of stripping heterogeneous substrates; the laser hits the junction from the sapphire surface and makes GaN decompose to achieve substrate stripping. [ 23–26 ] Inspired by this way, in this article, a low‐stress substrate preparation method is developed through partially decomposing GaN at the interface via tuning the laser energy. MOCVD–GaN/Al 2 O 3 (MGA) was used as the starting substrate.…”

Section: Introductionmentioning

confidence: 99%

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

Zhang

et al. 2020

Physica Status Solidi (a)

View full text Add to dashboard Cite

The lack of high-quality gallium nitride (GaN) wafers may be a non-negligible bottleneck restricting the development of GaN-based devices. Although various processing methods have been used to reduce dislocation density, there is still plenty of room for the reduction of stress in GaN crystal. Herein, laser decomposition is verified as an efficient technique to reduce the interfacial stress in GaN-sapphire and improve the lateral epitaxial growth quality of GaN crystal. The variation of the stress on surface and at a depth of 2 μm by controlling the incident pulse energy is systematically studied and the physical mechanism of laser decomposition process is discussed. As the incident energy increases, the stress is weakened within a certain range. Experimental evidences of the good growth quality are displayed by the investigation of high-resolution X-ray diffraction, electron backscattered diffraction, and photoluminescence. Furthermore, high-quality UV photodetectors based on the as-obtained GaN are fabricated successfully, which show a strong photocurrent response and excellent stability. This work may pave a way towards improving crystal growth and provides a new insight for tuning interface stress so as to develop desired devices.

show abstract

Growth of Bulk GaN from Gas Phase

Siche

Zwierz

2018

Crystal Research and Technology

View full text Add to dashboard Cite

The present status of the GaN bulk growth by vapor growth methods is reviewed and is shortly classified into all methods with bulk growth potential. The hydride vapor phase epitaxy (HVPE) as the most developed and already commercialized method using chlorine as transport agent was frequently reviewed before. However, it does not yield true bulk GaN, suffers from perfection limiting heteroepitaxy, direction depending growth rate, parasitic growth and by‐product formation, the latter both limiting the process duration. Therefore, in this review other methods are considered. Alternative transport agents are pronounced, like iodine, hydrogen, oxygen, water and the pseudo halide CN− ‐ ion, which are not able to reveal potential for bulk growth. These mostly less successful approaches, are sometimes repeated, because not adequately published.

show abstract

Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing

Cited by 12 publications

References 25 publications

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

Growth of semipolar {20–21} GaN and {20–2–1} GaN for GaN substrate

High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector

Growth of Bulk GaN from Gas Phase

Contact Info

Product

Resources

About