Growth of thick GaN layers with hydride vapour phase epitaxy

Ḿonemar, B.; Larsson, Henrik; Hemmingsson, Carl; Ivanov, Ivan Gueorguiev; Gogova, D.

doi:10.1016/j.jcrysgro.2005.03.040

Cited by 59 publications

(66 citation statements)

References 16 publications

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“…Some of these thick GaN substrates were grown with HVPE at Link€ oping University, and removed from the sapphire substrates with a laser lift-off technique, as reported previously. 15 Other bulk c-plane GaN substrates were supplied by Furukawa Co., Ltd., Japan. The c-plane Mg doped MOCVD samples were grown at Meijo University as well as at Bremen University, details of the growth procedure can be found in previous papers.…”

Section: Samples and Experimental Proceduresmentioning

confidence: 99%

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Ḿonemar

Paskov

Pozina

et al. 2014

Journal of Applied Physics

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), the 3.466 eV ABE1 acceptor bound exciton and the associated 3.27 eV donor-acceptor pair (DAP) band are the only strong photoluminescence (PL) signals at 2 K, and are identified as related to the substitutional Mg acceptor with a binding energy of 0.225 6 0.005 eV, and with a moderate phonon coupling strength. Interaction between basal plane stacking faults (BSFs) and Mg acceptors is suggested to give rise to a second deeper Mg acceptor species, with optical signatures ABE2 at 3.455 eV and a corresponding weak and broad DAP peak at about 3.15 eV. The 2.9 eV PL band has been ascribed to many different processes in the literature. It might be correlated with another deep level having a low concentration, only prominent at high Mg doping in material grown by the Metal Organic Chemical Vapor Deposition technique. The origin of the low temperature metastability of the Mg-related luminescence observed by many authors is here reinterpreted and explained as related to a separate non-radiative metastable deep level defect, i.e., not the Mg Ga acceptor. V C 2014 AIP Publishing LLC. [http://dx

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Section: Samples and Experimental Proceduresmentioning

confidence: 99%

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Ḿonemar

Paskov

Pozina

et al. 2014

Journal of Applied Physics

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“…1 was grown at Lumilog, SA on a twostep epitaxial lateral overgrowth template, 23 and removed from the sapphire substrate at Linköping University by a laser lift-off technique, as described separately. 24 It had a thickness of about 300 m and a residual donor concentration in the mid 10 16 cm −3 range. Sample no.…”

Section: Samples and Experimental Proceduresmentioning

confidence: 99%

Transient photoluminescence of shallow donor bound excitons in GaN

et al. 2010

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We present a detailed study of photoluminescence transients for neutral donor bound excitons ͑DBEs͒ in GaN, notably the O N donor DBE at 3.4714 eV and the Si Ga DBE at 3.4723 eV. The studied samples are thick strain free nominally undoped bulk GaN samples, with a spectroscopic linewidth Ͻ0.5 meV at 2 K. The photoluminescence ͑PL͒ decay curves for these no-phonon ͑NP͒ lines are strongly nonexponential, and do not allow a proper assessment of the characteristic BE decay time. The decay of the LO-phonon replicas as well as the so-called two-electron transitions ͑TETs͒ at lower energies show a nicely exponential behavior, and allow extraction of DBE decay times of about 1.1 ns for the Si DBE and 1.8 ns for the O DBE, respectively. The initial nonexponential decay behavior of the NP lines has been studied in both the common front surface excitation-detection mode and with detection in transmission through the sample. This initial decay is explained as related to scattering processes in the near surface region, involving the DBEs and free excitons ͑FEs͒. Light scattering processes may also contribute to this complex decay shape. The DBE-LO-phonon decay does not discriminate between the O and Si DBEs because of spectral overlap involving different LO modes. The TET decays at 2 K are very different for transitions related to the DBE ground state and DBE excited states ͑going to p-like donor final states͒, for T Ͼ 10 K thermalization between the DBE ground state and DBE excited states produces a common decay time. Thermalization between free and bound excitons appears to occur above about 20 K, when the DBE decay follows the FE decay. A simple two-level modeling of exciton capture and recombination for the PL decay curves of the FE and the DBEs, as commonly used in the literature, is shown to be generally inadequate. A broad PL background in the TET spectral region is suggested to be related to a radiative Auger process, where the DBEs recombine while leaving the donors ionized.

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“…The HVPE experiments were carried out in a vertical reactor with a bottom-fed design [4]. The high-temperature zone, kept in our experiments in the range from 1050 to 1100 o C, was heated by an RFgenerator.…”

Section: Methodsmentioning

confidence: 99%

“…HVPE is the most common growth technique for native 2" GaN substrates [2][3][4]. There are different methods for damage-free preparation of free-standing GaN, e.g.…”

Section: Introductionmentioning

confidence: 99%

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HVPE GaN substrates: growth and characterization

Gogova

Siche

Kwasniewski

et al. 2010

Phys. Status Solidi (c)

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GaN substrates with low dislocation densities were prepared by halide vapor‐phase epitaxy (HVPE) on c‐plane sapphire and by means of a post‐growth laser‐induced lift‐off or natural stress‐induced (self‐) separation process. The HVPE growth on InGaN/GaN buffer layers and subsequent self‐separation method was seen as advantageous, in comparison with the laser‐induced lift‐off one, in terms of lower cost and better crystalline quality of the GaN material obtained. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of thick GaN layers with hydride vapour phase epitaxy

Cited by 59 publications

References 16 publications

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Properties of the main Mg-related acceptors in GaN from optical and structural studies

Transient photoluminescence of shallow donor bound excitons in GaN

HVPE GaN substrates: growth and characterization

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