2015
DOI: 10.1007/s10854-015-3577-z
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Growth of thick MOD-derived CeO2−x buffer layer with less residual carbon for coated conductors

Abstract: 120 nm thick CeO 2-x buffer layer with less residual carbon has been prepared on biaxially textured NiW substrate using a newly developed heat-treatment route by a metal organic deposition approach. The thickness enhancement of CeO 2-x buffer layer was achieved by multiple coatings. The residual carbon removal in CeO 2-x buffer layer was realized by introducing CO 2 into annealing atmosphere at the post-annealed step. Various characteristic methods, including X-ray diffraction, X-ray photoelectron spectra, emi… Show more

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