Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

Susilawati, Susilawati; Doyan, Aris; Muliyadi, Lalu; Hakim, Syamsul

doi:10.29303/jppipa.v6i1.264

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…Thermal characteristic is specs related to the properties of a material related to heat, such as thermal conductivity, heat capacity, and thermal expansion (Jin et al, 2021;Liang et al, 2021). Materials with high thermal conductivity will conduct heat more easily, while materials with low thermal conductivity will have more difficulty conducting heat (Buyanova et al, 2019;Doyan, Susilawati, Mahardika, et al, 2022;Susilawati et al, 2019). 4 also shows that thin film solar cell is also a keyword that appears frequently in research trends on the characteristics of thin films as electronic devices, namely 41 times with a relevance of 0.86.…”

Section: Resultsmentioning

confidence: 99%

A Systematic Review of the Trends Thin Film Characteristics Research as Electronic Device (2015-2024)

Susilawati,

Doyan,

Purwoko

et al. 2024

jppipa, pendidikan ipa, fisika, biologi, kimia

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Thin film characteristics are the properties possessed by the thin film, both physical and chemical properties. The characteristics of this thin film are influenced by several factors, namely the material that makes up the thin film, the thin film deposition method, and the conditions of the thin film deposition process. This research aims to identify and analyze research trends in the characteristics of thin films as electronic devices. This research method is descriptive and analytical. The data used in this research was obtained from documents indexed by Google Scholar from 2015-2024 using Publish or Perish and Dimension.ai. Research procedures use PRISMA guidelines. The data identified and analyzed are the type of publication, publication source, and the title of research on thin film synthesis that is widely cited. The data analysis method uses bibliometric analysis assisted by VOSviewer software. The results of the analysis show that the trend of research on the characteristics of thin films as electronic devices indexed by Google Scholar from 2015 to 2024 experienced a fluctuating increase, however, in 2023 there was a decline in the trend of research on the characteristics of thin films as electronic devices. There are many documents in the form of articles, proceedings, book chapters, preprints, and edited books that discuss research into the characteristics of thin films as electronic devices. Key words that are often used in research on the characteristics of thin films as electronic devices are thin film coating, heat transfer characteristic, film characteristic, and photovoltaic characteristic.

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Section: Resultsmentioning

confidence: 99%

A Systematic Review of the Trends Thin Film Characteristics Research as Electronic Device (2015-2024)

Susilawati,

Doyan,

Purwoko

et al. 2024

jppipa, pendidikan ipa, fisika, biologi, kimia

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“…Thin-film SnO2:(Al+F+In) consist of pure SnO2, 95% SnO2 doped with a mixture of 5% Al+F+In with a percentage of 33.3% each from 5% mixture, SnO2 90% doped with a mixture of 10% Al+ F+In with a percentage of 33.3% each from 10% mixture, 85% SnO2 were doped with a mixture of 15% Al+F+In with a percentage of 33.3% each from 15% mixture, 80% SnO2 mixed with a mixture of 20% Al+F+In with a percentage of 33.3% each of the 20% mixture, and 75% SnO2 were doped with a mixture of 25% Al + F + In with a percentage of 33.3% each from the 25% mixture. The thin-film were synthesized using a sol-gel method that is placed on the surface of the glass and the layer smoothing process is rotated using a spin coater [17]. The synthesis was carried out with several variations of doping material, namely 0, 5, 10, 15, 20, and 25%.…”

Section: Methodsmentioning

confidence: 99%

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

Doyan

Susilawati

Taufik

et al. 2021

SSP

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Tin oxide (SnO2) thin film is a form of modification of semiconductor material in nanosize. The thin film study aims to analyze the effect of triple doping (Aluminum, Indium, and Fluorine) on the optical properties of SnO2: (Al + In + F) thin films. Aluminum, Indium, and Fluorine as doping SnO2 with a mass percentage of 0, 5, 10, 15, 20, and 25% of the total thin-film material. The addition of Al, In, and F doping causes the thin film to change optical properties, namely the transmittance and absorbance values changing. The transmittance value is 67.50, 73.00, 82.30, 87.30, 94.6, and 99.80 which is at a wavelength of 350 nm for the lowest to the highest doping percentage, respectively. The absorbance value increased with increasing doping percentage at 300 nm wavelength of 0.52, 0.76, 0.97, 1.05, 1.23, and 1.29 for 0, 5, 10, 15, 20, and 25% doping percentages, respectively. The absorbance value is then used to find the gap energy of the SnO2: (Al + In + F) thin film of the lowest doping percentage to the highest level i.e. 3.60, 3.55, 3.51, 3.47, 3.42, and 3.41 eV. Thin-film activation energy also decreased with values of 2.27, 2.04, 1.85, 1.78, 1.72, and 1.51 eV, respectively for an increasing percentage of doping. The thin-film SnO2: (Al + In + F) which experiences a gap energy reduction and activation energy makes the thin film more conductive because electron mobility from the valence band to the conduction band requires less energy and faster electron movement as a result of the addition of doping.

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“…Figure 1. Procedure for Synthesis and Characterization of Titanium Dioxide Thin Films with Fluorineand Indium Doping Mixture[15,16] …”

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confidence: 99%

Structure and optical properties of Titanium Dioxide thin film with mixed Fluorine and Indium doping for solar cell components

Doyan

Susilawati

Mahardika

et al. 2022

J. Phys.: Conf. Ser.

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Research has been carried out in the form of the synthesis of a thin film of Titanium Dioxide with a mixture of Fluorine and Indium doping. The purpose of this research is to obtain the characteristics of a thin filmphotocatalyst with a crystal structure and optical properties that can be applied to solar cell components. This research was carried out in two stages, namely the synthesis stage and the thin filmcharacterization stage. The TiO2 thin film synthesis stage is through the substrate preparation process, sol-gel solution preparation, thin film deposition, and heating process, while the thin-film characterization stage uses X-Rays Diffraction (XRD) to identify crystal properties and UV-VisSpectrophotometer to determine optical properties of a thin film of TiO2 and TiO2:(F+In). Based on data analysis and discussion, XRD test results showed that the thin film of TiO2:(F+In) has an Anatase phase with a tetragonal shape, and has an average crystal size that is getting smaller from 23.14 to 12.17 nm. Based on the results of research, data analysis, and discussion, it was found that the sample of TiO2 : (F+In) has characteristics that can be used as materials in the development of solar cell components. These characteristics are like 1). havenano-sized particles, 2). have a low transmittance value and high absorbance in absorbing sunlight, and 3). have a low activation energy and energy gap (direct and indirect).

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Growth of Tin Oxide Thin Film by Aluminum and Fluorine Doping Using Spin Coating Sol-Gel Techniques

Cited by 6 publications

References 15 publications

A Systematic Review of the Trends Thin Film Characteristics Research as Electronic Device (2015-2024)

A Systematic Review of the Trends Thin Film Characteristics Research as Electronic Device (2015-2024)

The Optical Properties of Thin Films Tin Oxide with Triple Doping (Aluminum, Indium, and Fluorine) for Electronic Device

Structure and optical properties of Titanium Dioxide thin film with mixed Fluorine and Indium doping for solar cell components

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