Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Svensson, Stefan P.; Donetsky, D.; Wang, Dinghui; Hier, H.; Crowne, F. J.; Belenky, Gregory

doi:10.1016/j.jcrysgro.2011.08.030

Cited by 124 publications

(74 citation statements)

References 29 publications

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“…4.1 GaSb-rich dilute nitride HMA It was recognized that addition of N to GaSb could potentially produce a direct bandgap material suitable for long-wave infrared detection [84,85,86,87,88,89,90]. By also alloying on the group III site with In, it could be possible to drastically reduce the bandgap while staying lattice matched to a GaSb substrate [89,86,90,91,92].…”

Section: Lt-mbe Gan 1-x Sb X Hmasmentioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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Highly mismatched alloys (HMAs) is a class of semiconductor alloys whose constituents are distinctly different in terms of size, ionicity and/or electronegativity. Electronic properties of the alloys deviate significantly from an interpolation scheme based on small deviations from the virtual crystal approximation. Most of the HMAs were only studied in a dilute composition limit. Recent advances in understanding of the semiconductor synthesis processes allowed growth of thin films of HMAs under non-equilibrium conditions. Thus reducing the growth temperature allowed synthesis of group III-N-V HMAs over almost the entire composition range. This paper focuses on the GaNxSb1-x HMA which has been suggested as a potential material for solar water dissociation devices. Here we review our recent work on the synthesis, structural and optical characterization of GaN1-xSbx HMA. Theoretical modeling studies on its electronic structure based on the band anticrossing (BAC) model are also reviewed. In particular we discuss the effects of growth temperature, Ga flux and Sb flux on the incorporation of Sb, film microstructure and optical properties of the alloys. Results obtained from two separate MBE growths are directly compared. Our work demonstrates that a large range of direct bandgap energies from 3.4 eV to below 1.0 eV can be achieved for this alloy grown at low temperature. We show that the electronic band structure of GaN1-xSbx HMA over the entire composition range is well described by a modified the BAC model which includes the dependence of the host matrix band edges as well as the BAC model coupling parameters on composition. We emphasize that the modified BAC model of the electronic band structure developed for the full composition of GaNxSb1-x is general and is applicable to any HMA.

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Section: Lt-mbe Gan 1-x Sb X Hmasmentioning

confidence: 99%

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Sarney

Новиков

et al. 2016

Semicond. Sci. Technol.

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“…As in the recent report [28,[30][31][32][33], residual doping is added as mentioned in the previous section. With reference to E f at 0 eV location, the band diagram is demonstrated in Figure 9.…”

Section: Modeling and Simulation Resultsmentioning

confidence: 99%

“…The simulation is performed as a bulk material where the electronic transport inside mini-bands is ignored. To keep the consistency with the recent literature, modeling materials parameters for InAs and GaSb are listed as reported earlier [29][30][31][32][33].…”

Section: Input Parameters For Inas/gasb Superlatticesmentioning

confidence: 98%

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Lee¹,

Price²

2018

Two-Dimensional Materials for Photodetector

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This chapter focuses on characterization, modeling, and simulation about the type-II superlattices photodetector application. Despite dramatic improvements in type-II superlattices in the past 15 years, challenges still exist in InAs/GaSb and InAs/GaInSb superlattices: The diffusion current, Shockley-Read-Hall (SRH) recombination current, tunneling current, and surface leakage current at elevated temperature. To establish a set of modeling and simulation input parameters, in-depth materials and device characterization at different conditions are carried out for initial materials and device models. Based on input parameters, we will describe the development of analytical and numerical models of InAs/GaSb and InAs/GaInSb type-II superlattice-structured materials and device systems. At the end of this chapter, the fitting of modeled and simulated data will be performed to compare empirical data and modeling results at a set of temperature, which will provide guidance to achieve the higher performance.

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“…6 Calculations show that a 350-ns lifetime must be reached for a LWIR T2SL pn homojunction photodiode to achieve background limited operation (BLIP) at 80 K with F/6.5 optics in a 300 K background. 4 Campaigns to improve the minority carrier lifetime have led to investigations of the InAs/Ga 1Àx In x Sb T2SL interface type 7 and density, 8,9 as well as doping concentration, 2,10 but have thus far resulted in minor or no improvements in the carrier lifetime. It is hypothesized that a native defect associated with InAs or GaSb limits the carrier lifetime.…”

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confidence: 99%

“…It is hypothesized that a native defect associated with InAs or GaSb limits the carrier lifetime. 9 The measured lifetimes of bulk InAs ($325 ns) (Ref. The InAs/InAs 0.72 Sb 0.28 T2SL was designed with AlSb barriers for TRPL measurements.…”

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confidence: 99%

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Steenbergen

Connelly

Metcalfe

et al. 2011

Applied Physics Letters

272

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Time-resolved photoluminescence measurements reveal a minority carrier lifetime of >412 ns at 77 K under low excitation for a long-wavelength infrared InAs/InAs0.72Sb0.28 type-II superlattice (T2SL). This lifetime represents an order-of-magnitude increase in the minority carrier lifetime over previously reported lifetimes in long-wavelength infrared InAs/Ga1−xInxSb T2SLs. The considerably longer lifetime is attributed to a reduction of non-radiative recombination centers with the removal of Ga from the superlattice structure. This lifetime improvement may enable background limited T2SL long-wavelength infrared photodetectors at higher operating temperatures.

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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Cited by 124 publications

References 29 publications

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

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Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Cited by 124 publications

References 29 publications

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties

Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

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Product

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Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties

Highly mismatched GaN_1−xSb_xalloys: synthesis, structure and electronic properties