Growth of ultrathin chemically-deposited CdS films from an ammonia-thiourea reaction system

Gluszak, E.A.; Hinckley, Steven

doi:10.1109/commad.2000.1022931

Cited by 1 publication

(1 citation statement)

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“…CdS thin films can be prepared by different techniques [4][5][6][7][8][9][10][11] such as thermal evaporation, close spaced sublimation, metal organic chemical vapor deposition (MOCVD), molecular-beam epitaxy (MBE), chemical bath deposition (CBD), chemical spray pyrolysis (CSP), electrodeposition and sputtering. Among these methods, thermal evaporation is one of the suitable methods for depositing large area thin film for solar cell application [12].…”

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confidence: 99%

Investigation of Al Schottky junction on n-type CdS film deposited on polymer substrate

Gupta

Patidar

Baboo

et al. 2010

Front. Optoelectron. China

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A systematic study has been made on the behavior of Al/n-CdS thin film junction on flexible polymer substrate (polyethylene terephthalate, PET) grown using thermal evaporation method. Temperature dependence of I -V measurements for this junction has been done which closely follow the equations of Schottky barrier junction dominated by thermionic emission mechanism. Intrinsic and contact properties such as barrier height, ideality factor and series resistance have been calculated from I -V characteristics. The barrier height of Al/n-CdS junction is found to increase with increase in temperature whereas ideality factor and series resistance decrease with increase in temperature.

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