Growth of undoped ZnMgTe layers by metalorganic vapour phase epitaxy

Structural and optoelectronic properties of Mg substituted ZTe (Z=Zn, Cd and Hg)

“…x Mg x Te layers have been grown on (100) ZnTe substrates by atmospheric pressure metal organic vapor phase epitaxy (MOVPE) [14] and also by molecular beam epitaxy using (001) ZnTe substrates in the composition range x ≤ 0.66 [10]. Liu et al [15] grown Mg x Zn 1-x Te (0 ≤ x ≤ 0.67) by molecular beam epitaxy on the (100) GaAs substrates and measured their band gap values by photoluminescence at 12 K, and by optical reflectivity at room temperature.…”

Influence of dopant transport rate upon photoluminescence and electrical properties of phosphorus‐doped ZnMgTe layers grown by MOVPE

“…1 Introduction Zn 1-x Mg x Te ternary alloy is a promising material for an optically active layer in the green-toblue range and a cladding layer for improving a performance of ZnTe-based pure-green light-emitting-diodes and for realizing ZnTe-based laser diodes. Unfortunately, there are only a few works on Zn 1-x Mg x Te epitaxial layer grown by metalorganic vapor phase epitaxy (MOVPE) [1][2][3][4][5][6], which is a potential epitaxial growth technique for mass production. So far, nominally undoped Zn 1-x Mg x Te epitaxial layers have been successfully grown on (100) ZnTe substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters for control of Mg composition and for improvement of optical property were revealed [4][5][6].…”

“…Unfortunately, there are only a few works on Zn 1-x Mg x Te epitaxial layer grown by metalorganic vapor phase epitaxy (MOVPE) [1][2][3][4][5][6], which is a potential epitaxial growth technique for mass production. So far, nominally undoped Zn 1-x Mg x Te epitaxial layers have been successfully grown on (100) ZnTe substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters for control of Mg composition and for improvement of optical property were revealed [4][5][6]. However, intentional doping is essential for device applications, there is lack of doping study of MOVPE grown Zn 1-x Mg x Te layer.…”