1986
DOI: 10.1016/0022-0248(86)90246-0
|View full text |Cite
|
Sign up to set email alerts
|

Growth of very thick In1-xGaxAs layers by source-current-controlled method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
2
0

Year Published

1989
1989
2010
2010

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 27 publications
(2 citation statements)
references
References 15 publications
0
2
0
Order By: Relevance
“…The application of an electric current in such a system moves the species of the liquid mixture (melt/solution) in the direction of the applied electric current. This mass transport mechanism is known as electromigration [3][4][5][6][7][8][9][10][11][12][13]. It is the main growth mechanism (driving force for growth) in the LPEE growth of semiconductors.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…The application of an electric current in such a system moves the species of the liquid mixture (melt/solution) in the direction of the applied electric current. This mass transport mechanism is known as electromigration [3][4][5][6][7][8][9][10][11][12][13]. It is the main growth mechanism (driving force for growth) in the LPEE growth of semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…The LPEE growth technique was actually developed during the use of electric current for dopant modulation in liquid phase epitaxy (LPE) [3], and then became a solution growth technique for the growth of semiconductor crystals (see for instance Refs. [4][5][6][7][8][9][10][11][12][13]). In LPEE, the applied electric current is the only driving force for mass transport.…”
Section: Introductionmentioning
confidence: 99%