Growth of whiskers of hexagonal boron nitride

Ishii, T.; Satô, Tadao; Sekikawa, Yoshizo; Iwata, Makoto

doi:10.1016/0022-0248(81)90206-2

Cited by 127 publications

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“…Interesting is that the next study on r-BN phase was conducted 23 year later by T. Ishii et al [70]. In 1966 Geick et al measured infrared and Raman spectroscopy and found that the observed lines in those spectra were in agreement with the crystal lattice proposed by Pease [71,68].…”

Section: History Of Bnsupporting

confidence: 48%

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chubarov¹

2014

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The aim of this work was to develop a chemical vapour deposition process and understand the growth of sp 2 hybridised Boron Nitride (sp 2 -BN). Thus, the growth on different substrates together with the variation of growth parameters was investigated in details and is presented in the papers included in this thesis. Deposited films of sp 2 -BN were characterised with the purpose to determine optimal deposition process parameters for the growth of high crystal quality thin films with further investigations of chemical composition, morphology and other properties important for the implementation of this material towards electronic, optoelectronic devices and devices based on graphene/BN heterostructures.For the growth of sp 2 -BN triethyl boron and ammonia were employed as B and N precursors, respectively. Pure H 2 as carrier gas is found to be necessary for the growth of crystalline sp 2 -BN. Addition of small amount of silane to the gas mixture improves the crystalline quality of the growing sp 2 -BN film.It was observed that for the growth of crystalline sp 2 -BN on c-axis oriented -Al 2 O 3 a thin and strained AlN buffer layer is needed to support epitaxial growth of sp 2 -BN, while it was possible to deposit rhombohedral BN (r-BN) on various polytypes of SiC without the need for a buffer layer. The growth temperature suitable for the growth of crystalline sp 2 -BN is 1500 °C. Nevertheless, the growth of crystalline sp 2 -BN was also observed on -Al 2 O 3 with an AlN buffer layer at a lower temperature of 1200 °C. Growth at this low temperature was found to be hardly controllable due to the low amount of Si that is necessary at this temperature and its accumulation in the reaction cell. When SiC was used as a substrate at the growth temperature of 1200 °C, no crystalline sp 2 -BN was formed, according to X-ray diffraction.Crystalline structure investigations of the deposited films showed formation of twinned r-BN on both substrates used. Additionally, it was found that the growth on Om man skulle kunna göra ljusdioder av BN skulle dessa sända ut ljus med en våglängd på cirka 220 nm alltså den typen av ultraviolettljus (UV) som ozonlagret filtrerar bort från solen. Av sådana ljusdioder skulle man sedan kunna göra vita ljusdioder genom att använda en luminofor, vilket är ett material som absorberar UV-ljus och sedan sänder ut vitt ljus, men ännu mera spännande skulle det vara att använda ljusdioderna för vattenrening då denna typ av UV-ljus dödar bakterier.Eftersom BN bildar samma kristallstrukturer som kol, så är den grafitlika, sp 2 -hybridiserade formen av BN mycket intressant att använda tillsammans med grafen.Beräkningar har visat att om man använder sp 2 -BN som substrat till grafen så kommer man åt större del av de förutspådda materialegenskaperna för grafen än om man använder andra substrat.Syftet med detta arbete har varit att utveckla en syntesprocess för tunna filmer av sp 2 -BN med tillräckligt hög kvalité för att kunna börja utforska alla möjligheter med BN, för detta har en teknik som kal...

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Section: History Of Bnsupporting

confidence: 48%

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chubarov¹

2014

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“…Examples of this are the ®lamentary crystals reported by Ishii et al (1981). More recently, a type of turbostratic BN examined under scanning electron microscopy was found to consist of columnar particles with conical tips (Sato, 1996).…”

Section: Introductionmentioning

confidence: 91%

Boron nitride cones: structure determination by transmission electron microscopy

Bourgeois

Bando

Shinozaki

et al. 1999

Acta Crystallogr A Found Crystallogr

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A form of turbostratic boron nitride containing a large percentage of micrometre-size conically shaped particles was investigated by transmission electron microscopy. Electron diffraction patterns revealed the presence of correlations between adjacent boron nitride layers. The diffraction patterns were also used to determine the cone apex angle of many cone-like objects. The apex angles exhibited a broad distribution from 84 to 130 with an ill de®ned peak in the 92±95 region. These results could be accounted for by a structure model in which conical boron nitride layers are helically wound about a disclination axis, according to overlap angles that correspond to high densities of coincidental lattice sites between successive layers. The clustering of the apex angles near 93 was attributed to the formation of a square ring during the nucleation stage. This appears to be speci®c to the boron nitride system.

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“…Recently, Ma et al [86] prepared two kinds of BN nanotubes, multiwalled and bamboo BN nanotubes, using chemical vapor deposition (CVD) by pyrolyzing a B-N-O precursor at 2000 K under a N 2 /NH 3 atmosphere. [87,88] These nanotubes were found to absorb hydrogen at levels up to 1.8 and 2.6 wt.-% respectively at about 10 MPa. This compares well to the negligible 0.2 wt.-% absorption in conventional BN powders as shown in Figure 5.…”

Section: Boron Nitride Nanotubesmentioning

confidence: 98%

Recent Advances in Hydrogen Storage in Metal‐Containing Inorganic Nanostructures and Related Materials

Seayad

Antonelli²

2004

Advanced Materials

463

281

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An overview of recent advances in the application of non‐carbonaceous nanostructured and composite materials in hydrogen storage is presented in this review. The main focus is on complex hydrides, non‐graphitic nanotubes, and other porous composite and framework materials, since carbon nanotubes have been the subject of numerous other reviews. Recent advances in the area of alanates show a promising reversible absorption capability of up to 5 %, closing in on the projected Department of Energy (DOE) target of 6 %. Non‐carbon nanotubes mainly showed a sorption capacity of 1–3 wt.‐%, although a promising level of 4.2 wt.‐% is shown by boron nitride nanotubes after collapse of their walls. Other interesting materials included here are lithium nitride and porous metallo‐organic frameworks.

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Growth of whiskers of hexagonal boron nitride

Cited by 127 publications

References 0 publications

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Chemical Vapour Deposition of sp2 Hybridised Boron Nitride

Boron nitride cones: structure determination by transmission electron microscopy

Recent Advances in Hydrogen Storage in Metal‐Containing Inorganic Nanostructures and Related Materials

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