Growth of Zinc Chalcogenides

Triboulet, R.

doi:10.1016/b978-081551453-4.50017-8

Cited by 6 publications

(2 citation statements)

References 178 publications

(149 reference statements)

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“…Recently, the growth of ZnO thin films has been studied for those electric devices because of their versatile properties utilizing various growth techniques like molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and metal organic chemical vapor deposition (MOCVD) [1,2]. As we all know, the electrical properties of ZnO films would show high dependence on the film orientation and interface quality from the viewpoint of piezoelectric polarization, optical properties and semiconductor carrier transportation properties [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Effect of symmetry of substrate surfaces on the orientation and growth mode of ZnO films

Wei

Jie

Huang

et al. 2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Effect of symmetry of substrate surfaces on the orientation and growth mode of ZnO films

Wei

Jie

Huang

et al. 2009

Journal of Crystal Growth

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“…CdZnTe (CZT) crystals have been gradually attracting more attention over the last decade, and are considered as a promising material for the fabrication of room temperature X/γ-ray detectors with excellent energy resolution [1,2] . A high sensitivity and response X/γ-ray spectrometer and imaging system have been produced by using a CZT pixelated array or Frisch grid detector combining with standard integrated reading circuits, without any additional cooling system.…”

Section: Introductionmentioning

confidence: 99%

Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

Ye¹,

Xu²,

Wang³

et al. 2009

J. Semicond.

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To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobility lifetime products (μτ)e of the CdZnTe crystals were predicted by fitting plots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF technique was employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electron drift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing the rise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based on a low In concentration doped CdZnTe crystal with (μτ)e = 2.3 × 10−3 cm2/V and μe = 1000 cm2/(V ṁ s), respectively, exhibits an excellent γ-ray spectral resolution of 6.4% (FWHM = 3.8 keV) for an un-collimated 241Am @ 59.54 keV isotope.

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High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

Lott

Shinkarenko

Volobujeva

et al. 2007

Physica Status Solidi (b)

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High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe : In and of CdSe : In are compared. There are differencies in In-doping mechanisms of II -VI compounds. When HTEC isotherms and isobars of ZnSe : In and of CdSe : In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (

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Growth of Zinc Chalcogenides

Cited by 6 publications

References 178 publications

Effect of symmetry of substrate surfaces on the orientation and growth mode of ZnO films

Effect of symmetry of substrate surfaces on the orientation and growth mode of ZnO films

Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

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