Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

Adolph, David; Tingberg, Tobias; Ive, Tommy

doi:10.1016/j.jcrysgro.2015.05.026

Cited by 13 publications

(3 citation statements)

References 36 publications

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“…For verification ZnO(0001) layers were also grown on GaN/4H‐SiC buffer layers according to the procedure recently reported in Ref. (). A 5 min pre‐exposure with the O‐plasma using

Φ_{O_{2}} = 2.0

sccm of the

{normalGaN / italicAl}_{2} O_{3}

(0001) templates was made before opening the Zn‐shutter which initiated the ZnO(000

\overset{1}{true}

) growth.…”

Section: Methodsmentioning

confidence: 99%

“…Here, a polarity inversion across the p‐GaN(000

\overset{1}{true}

)/ZnO(0001)’interface without any interface oxide was observed and the electronic band structure across the heterointerface was calculated (). It has also been shown that it is possible to grow both GaN and ZnO with similar crystal quality and surface morphology in the same MBE system, thus, allowing a straightforward and completely in situ process . Here, a smooth ZnO(0001) layer was achieved using a high O/Zn‐ratio and a low growth rate.…”

Section: Introductionmentioning

confidence: 99%

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Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Adolph

Ive

2016

Phys. Status Solidi B

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We studied the effects of a varying O2 flow rate on the growth of ZnO(0001) and ZnO(000true1‾) layers on normalGaN/italicAl2O3 templates by plasma‐assisted molecular beam epitaxy. The O2 flow rate through the O‐plasma source was varied between 0.25 and 4.5 standard cubic centimeters per minute (sccm) corresponding to a growth chamber pressure between 3.0×10−6 and 5.0×10−5 Torr. We found that the change of the O2 flow rate had a profound effect on the ZnO layer growth rate. A maximum growth rate was reached for an O2 flow rate of 1.0–2.0 sccm. The same growth rate dependence on the O2 flow rate was observed for ZnO(0001) layers that were grown on GaN/4H‐SiC buffer layers for verification. To assess the amount of active O contributing to the ZnO‐growth, the spectral composition of the plasma was investigated with optical emission spectroscopy. The integrated optical emission line intensity reached a maximum for an O2 flow rate between 1.0 and 2.0 sccm. Essentially all emission lines exhibited a maximum intensity for an O2 flow rate between 1.0 and 2.0 sccm thus coinciding with the flow rate yielding the maximum growth rate.

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“…For verification ZnO(0001) layers were also grown on GaN/4H‐SiC buffer layers according to the procedure recently reported in Ref. (). A 5 min pre‐exposure with the O‐plasma using

Φ_{O_{2}} = 2.0

sccm of the

{normalGaN / italicAl}_{2} O_{3}

(0001) templates was made before opening the Zn‐shutter which initiated the ZnO(000

\overset{1}{true}

) growth.…”

Section: Methodsmentioning

confidence: 99%

“…Here, a polarity inversion across the p‐GaN(000

\overset{1}{true}

Section: Introductionmentioning

confidence: 99%

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Adolph

Ive

2016

Phys. Status Solidi B

Self Cite

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show abstract

“…Both vacuum based and solution-processed thin film deposition methods have been used by researchers, extensively. Magnetron sputtering [9], pulsed laser [10] and plasma-assisted molecular beam epitaxy [11] are the most widely-known vacuum based deposition techniques to manufacture ZnO thin films. On the other hand, simple and multi-functional chemical deposition methods have also been widely used recently.…”

Section: Introductionmentioning

confidence: 99%

Effect of Monoethanolamine Content on the Crystallinity of ZnO Thin Films

Tumbul

2019

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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ZnO is one of the most widely used semiconductors for opto-electronic applications due to its tunable band gap energy, high optical transparency in visible region. The effect of different monoethanolamine (MEA) ratio on structural, morphological and optical properties of ZnO thin films was investigated in this study. A nano-fiber like structured ZnO was fabricated through facile sol-gel dip coating process on glass substrates without any further treatment. We observed that the peak intensity of samples increased and the amount of defects in the crystal could be further decreased by rising its of monoethanolamine. Besides, the micro-fiber like grains of the ZnO covered the glass surface quite densely when the monoethanolamine content increased. The optical study showed that the transparency of the films could be enhanced by increasing the amount of stabilizer.

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Manifestations of Nanomaterials in Development of Advanced Sensors for Defense Applications

Kitture¹,

Kale²

2020

Handbook of Advanced Ceramics and Composites

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Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

Cited by 13 publications

References 36 publications

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Effect of Monoethanolamine Content on the Crystallinity of ZnO Thin Films

Manifestations of Nanomaterials in Development of Advanced Sensors for Defense Applications

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Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

Cited by 13 publications

References 36 publications

Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Effect of Monoethanolamine Content on the Crystallinity of ZnO Thin Films

Manifestations of Nanomaterials in Development of Advanced Sensors for Defense Applications

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Product

Resources

About

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy