2009
DOI: 10.1007/978-3-540-88847-5_3
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Growth of ZnO and GaN Films

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Cited by 2 publications
(2 citation statements)
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“…Plasma-assisted MBE (PAMBE) is the main approach in MBE growth of ZnO, in which the atomic oxygen was either generated by a RF plasma source or by an electron cyclotron resonance plasma source. PAMBE has been proven to yield ZnO films with the highest material quality [8]. Critical parameters for PAMBE growth of ZnO are Zn flux, O 2 flow, substrate temperature, and plasma power [8].…”
Section: Introductionmentioning
confidence: 99%
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“…Plasma-assisted MBE (PAMBE) is the main approach in MBE growth of ZnO, in which the atomic oxygen was either generated by a RF plasma source or by an electron cyclotron resonance plasma source. PAMBE has been proven to yield ZnO films with the highest material quality [8]. Critical parameters for PAMBE growth of ZnO are Zn flux, O 2 flow, substrate temperature, and plasma power [8].…”
Section: Introductionmentioning
confidence: 99%
“…PAMBE has been proven to yield ZnO films with the highest material quality [8]. Critical parameters for PAMBE growth of ZnO are Zn flux, O 2 flow, substrate temperature, and plasma power [8]. It has been reported that the growth rate of ZnO increases with the increase of plasma power [9,10].…”
Section: Introductionmentioning
confidence: 99%