“…The ZnO/HOPG junctions demonstrate ohmic or diode-like characteristics depending on whether the device is annealed in reducing or oxidizing atmosphere, respectively, [57,59,60] implying the significance of the interfacial oxygen species in shaping the electronic features in MO/HOPG structures. Here, we use ab initio modeling for determining the structure of ZnO/Gr junctions, foreseeing very different current-voltage (I-V) characteristics for those formed at zinc-rich and oxygen-rich environments, and predict pressure sensitivity for the latter.…”