“…However, its high recombination efficiency of photo‐generated carriers, resulting in a limited hydrogen production rate, is generally regarded as the main drawback that hinders its further applications. To solve this problem, various heterostructure composites containing g‐C 3 N 4 were developed, i. e., ZnO/g‐C 3 N 4 , SnO 2 /g‐C 3 N 4 , TiO 2 /C 3 N 4 , WO 2 /C 3 N 4 , α‐Fe 2 O 3 /C 3 N 4 , Bi 2 O 2 CO 3 /PCN, NiS 2 /g‐C 3 N 4 , Ag–Sr 0.25 H 1.5 Ta 2 O 6 ⋅H 2 O/g‐C 3 N 4 , g‐C 3 N 4 /ZnFe 2 O 4 /Fe 2 O 3 etc . These heterostructure composites indeed facilitated the carriers separation through constructing heterojunctions between g‐C 3 N 4 and other semiconductors, but they usually underwent complicated post‐treatment process, like hydrothermal or calcinating, to create strong interface effects, which is not conducive to further commercial applications.…”