Growth of ZnS Thin Films using Chemical Spray Pyrolysis Technique

Al-Diabat, Ahmad M.; Ahmed, Naser M.; Hashim, M.R.; Almessiere, M.A.

doi:10.1016/j.matpr.2019.06.390

Cited by 15 publications

(5 citation statements)

References 24 publications

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“…Optical band gap energy values of ZnS:Ni films listed in Table 4 change in the range of 3.71-3.96 eV and there is a small decrease in the optical band gap values with Ni doping. Optical band gap energies calculated for undoped and Ni doped ZnS films are in good agreement with other studies in the literature (Al-Diabat et al, 2019;Poornaprakash et al, 2015;Wei et al, 2013;Shin et al, 2011).…”

Section: Optical Analysissupporting

confidence: 90%

“…The fundamental absorption spectra were used to calculate the optical band gap energies of the films using Tauc expression given as follows (Bashar et al, 2020;Al-Diabat et al, 2019;Wei et al, 2013;Benamra et al, 2020).…”

Section: Optical Analysismentioning

confidence: 99%

“…Zinc sulfide (ZnS) is one of the first semiconductors discovered (Fang et al, 2011). ZnS has been studied extensively in the literature and its usage is increasing day by day, especially in photovoltaic solar cells applications (Echendu et al, 2014;Echendu and Dharmadasa, 2015;Akhtar et al, 2015) and various photonic devices (Bashar et al, 2020;Echendu and Dharmadasa, 2013;Al-Diabat et al, 2019). Zinc sulfide (ZnS) is one of the II-VI semiconductors with n-or p-type conductivity, which attracts the attention of many researchers (Echendu et al, 2013;Cheng et al, 2003;Wood-Robinson et al, 2016).…”

Section: Introductionmentioning

confidence: 99%

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Preparation and Characterization of Nickel-Doped Zinc Sulphide Thin Films for Solar Cell Applications

Küçükarslan¹,

Demirselçuk²,

Kuş³

et al. 2021

JSTR

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This study presents the production of pure and different amounts of Ni-doped (4, 8, 12%) ZnS films on microscope glass substrate at 4005°C substrate temperature with Ultrasonic Spray Pyrolysis Technique and the effect of Ni doping on some physical properties of pure films. X-ray diffractometer (XRD), UV-Vis spectrophotometer, two-probe method and atomic force microscope (AFM) were used to analyze the structural, optical, electrical and surface properties of all films, respectively. XRD patterns contains broad peaks showing a low crystallinity level for the films. Ni doping caused ZnS films to have high absorbance values through the visible spectrum. Optical band gap energy values of ZnS:Ni thin films were determined to be between 3.71-3.96 eV. Two-probe measurements revealed that the electrical conductivity values of ZnS films increased significantly depending on the Ni doping. AFM results showed that the films have an almost homogeneous distribution with a rough surface. No significant change was observed for the surface properties of the films due to the Ni doping. As a result of all analyzes; it was seen that Ni doping has an important effect on the optical and electrical properties of ZnS films, without modifying the crystalline structure or surface texture.

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Section: Optical Analysissupporting

confidence: 90%

Section: Optical Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Preparation and Characterization of Nickel-Doped Zinc Sulphide Thin Films for Solar Cell Applications

Küçükarslan¹,

Demirselçuk²,

Kuş³

et al. 2021

JSTR

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“…Many previous researches have investigated ZnS thin films using various techniques such as thermal evaporation and the SILAR method, [ 17 ] pulsed laser deposition, [ 18 ] the sol gel method associated with the dip coating technique, [ 11 ] chemical bath deposition, [ 19 ] RF sputtering, [ 20 ] and spray pyrolysis technique. [ 21 ] Among these techniques, chemical spray pyrolysis is one of the simplest, controllable, and low‐cost methods for thin film deposition. It can be used for large scale production and is the most attractive method to fabricate ZnS thin films successfully.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray‐Pyrolysis Technique

Najim

Hartiti

Nkuissi

et al. 2023

Cryst. Res. Technol.

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This study aims at synthesizing zinc sulfide (ZnS) thin films using spray pyrolysis method. The effect of the Zn concentration on the physical properties of ZnS is investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), UV-Vis spectrophotometer, photoluminescence (PL), and Raman spectroscopy. XRD shows a preferential orientation along the (111) direction corresponding to the ZnS cubic structure. Based on the XRD results, it is seen that low zinc concentrations compared to sulfur content can increase the crystalline quality of films. Raman spectra confirm the presence of the ZnS cubic structure observed by XRD and show the presence of sprayed ZnS vibrational modes for all films. PL emission spectrum of ZnS confirms the presence of Zn and S atoms at all molar concentrations. SEM reveals densely packed and uniformly distributed grains with precise shapes. The elemental analysis confirms the growth of stochiometric Zn/S ratio. The optical analysis shows a high transmittance around 88% in the visible range of the solar spectrum with optical band gaps varying from 3.4 to 3.6 eV. These properties are interesting and show that ZnS thin films can be used as buffer layers in thin film solar cells applications.

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“…For this reason, new semiconductors are studied to replace CdS. Among them, ZnS has attracted great attention as a promising buffer layer for solar cells owing to its tunable and direct band gap (3.65 eV) and earth-abundant elements [12,13].…”

Section: Introductionmentioning

confidence: 99%

Back contact nature effect on the CZTS/ZnS based heterojunction

et al. 2022

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This work contributes to the discussion on the influence of the back contact on the electrical properties of Cu2ZnSnS4 (CZTS) based solar cells. Devices with noble metals back contact (Au, Ag and Pt) such as FTO/ZnS/CZTS/Au, FTO/ZnS/CZTS/Pt and FTO/ZnS/CZTS/Ag were investigated by means of the current voltage characteristic in the dark (FTO = fluorine-doped tin oxide). The originality of this work is that all active layers (absorbing and buffer layers) are deposited by the same system using spray pyrolysis technique. The metallic back contacts are sputter deposited. X-ray diffraction (XRD) and UV-visible spectrophotometry were used to investigate the main structural and optical properties of different layers constituting the solar cell. The electrical characterization achieved by I-V characteristic proves that all synthesized heterojunctions exhibit a rectifying behavior. Furthermore, the ideality factors of Au, Pt and Ag back contacts were estimated to 1.6, 2.4 and 2.8, respectively. The lower saturation current and series resistance are measured in the heterojunction using Au as a back contact. From this study, it is shown that Au back contact could be an alternative of Mo in CZTS based solar cell prepared by spray pyrolysis.

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Growth of ZnS Thin Films using Chemical Spray Pyrolysis Technique

Cited by 15 publications

References 24 publications

Preparation and Characterization of Nickel-Doped Zinc Sulphide Thin Films for Solar Cell Applications

Preparation and Characterization of Nickel-Doped Zinc Sulphide Thin Films for Solar Cell Applications

A Comparative Study of the Structural and Optical Properties of ZnS Films Deposited by Spray‐Pyrolysis Technique

Back contact nature effect on the CZTS/ZnS based heterojunction

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