Growth of ZnTe layers on (111) GaAs substrates by metalorganic vapor phase epitaxy

Low temperature growth of In2O3 films via pulsed laser deposition with oxygen plasma

“…Therefore, we investigated the crystal quality of In 2 O 3 films by XRC using an X-ray double-crystal diffraction method because the FWHM of XRC is a remarkable measure of crystallinity. 28) Figures 3(a grown at low temperature. In addition, it is obvious that the assistance of plasma greatly improves the crystal quality of In 2 O 3 film when the growth temperature is lower than 300 °C.…”

Annealing time on carrier dynamics of ZnTe nanoparticles embedded in a near ultraviolet-transparent glass

“…ZnTe is prominent among group II-VI QD semiconductors because it has a direct band gap (bulk) of 2.26 eV at room temperature [2,3], optical transitions in the green region of the electromagnetic spectrum and an exciton Bohr radius of 5.2 nm [4,5]. ZnTe semiconductors, with or without quantum confinement properties, have potential applications in electro-optic and acousto-optic devices, green laser generation, laser diode substrates and as photoreactive material for optical data processing [6].…”

Heteroepitaxial growth and characterization of compound semiconductors

“…We have succeeded in growing ZnTe crystals epitaxially on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) and observed the emission of THz radiation with a spectral distribution up to 40 THz from the ZnTe film, paving the way for obtaining thinner ZnTe films to provide a flatter frequency response in THz device application [1]. In this invited talk, we focus on the heteroepitaxial growth of ZnTe layers on (0001) sapphire, and GaAs substrates by MOVPE, selected results on structural and optical properties of these ZnTe epilayers [2][3][4][5][6][7][8].…”