Growth of β-KGd1 − xNdx(WO4)2 single crystals in K2W2O7 solvents

Solé, R.; Nikolov, V.; Ruíz, Xavier; Gavaldà, Jna.; Soláns, Xavier; Aguiló, Magdalena; Díaz, Francesc

doi:10.1016/s0022-0248(96)00674-4

Cited by 90 publications

(55 citation statements)

References 7 publications

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“…5,8 Undoped 1 mm thick KYW crystals grown by a modified Czochralski method with laser-grade polished (010) faces served as substrates. Building on previous work, 5 we employed the vertical dipping technique with partial immersion of the substrate, which allowed us to control the uniformity of the grown layer accurately during subsequent polishing of the layer surface parallel to the interface.…”

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confidence: 99%

Yb-doped KY(WO4)2 planar waveguide laser

et al. 2006

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High-quality monoclinic KY͑WO 4 ͒ 2 optical waveguides were grown by liquid-phase epitaxy, and laser operation of an Yb-doped KY͑WO 4 ͒ 2 waveguide was demonstrated for the first time to our knowledge. Continuous-wave laser emission near 1 m was achieved with both surface and buried planar waveguides. An output power of 290 mW was obtained in the fundamental mode and the slope efficiency was above 80%. OCIS codes: 140.3070, 140.3380, 140.5680, 230.7390, 310.1860OCIS codes: 140.3070, 140.3380, 140.5680, 230.7390, 310. , 310.2790 Crystals of monoclinic KY͑WO 4 ͒ 2 (KYW) doped with different rare-earth ions are recognized as very promising materials for solid-state lasers operating at room temperature, both in pulsed and continuouswave (cw) mode. 1,2 Due to its high refractive indices, of the order of 2.0, KYW is highly suitable for the fabrication of integrated optical devices. Rare-earth ions incorporated into KYW exhibit very high absorption and emission cross sections. In particular, the Yb 3+ ion in KYW has an absorption maximum near 981 nm with a cross section, for polarization parallel to the N m principal optical axis, ϳ15 times larger than that of YAG:Yb. The short absorption length in highly doped KYW:Yb together with an extremely small laser quantum defect as low as 1.6% (Ref. 3) makes this material a favorable candidate for the thin-disk laser concept, 4 where the active medium is a thin crystal or deposited layer. Recently, cw laser operation normal to a thin layer of KYW doped with 20 at. % Yb (with respect to the Y site) on a KYW substrate was demonstrated and the maximum output power reached 40 mW at 1030 nm. © 2006 Optical Society of America 5In this Letter we report the epitaxial growth of high-quality optical waveguides and, for the first time to our knowledge, on waveguide laser operation based on a double tungstate crystal composite. The waveguide geometry provides potentially high pumppower densities and excellent overlap of pump and resonator modes. This approach requires fabrication of large-area, defect-free thin layers of KYW:Yb on appropriate substrates, having small lattice mismatch and close-to-perfect interfaces between the layer and the substrate to ensure low-loss propagation.Liquid-phase epitaxy (LPE) is a well-known technique for producing high-quality oxide films for laser applications, in which a single-crystal layer can be grown from a molten solution on an oriented singlecrystal substrate.6 During LPE of rare-earth-iondoped KYW layers employing a low-temperature chloride solvent, 7 3D island nucleation generated insertion defects, which limited the maximum layer thickness to approximately 10 m and led to nonoptimum interface quality.The tungstate solvent K 2 W 2 O 7 , which we employed successfully in the present work, can potentially offer larger thickness and good layer quality.5,8 Undoped 1 mm thick KYW crystals grown by a modified Czochralski method with laser-grade polished (010) faces served as substrates. Building on previous work, 5 we employed the vertical dipping tech...

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Yb-doped KY(WO4)2 planar waveguide laser

et al. 2006

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“…K 2 W 2 0T, a well-known compound commonly used in crystallization of double tungstates containing potassium, was chosen as a solvent. K 2 W 2 0 has relatively low viscosity, 4 what is very important factor in flux growth, and does not introduce any additional elements to the melt (so called self-flux). The solutions for crystallization were prepared by melting together proper amounts of K 2 COQ p.a., W0 3 99.998%, Gd 2 O 3 99.990/o, and Nd 2 O 3 99.99% to obtain 20 mol.% solution of KGd_.YNdx(WO 4 ) 2 in K 2 W 2 OQ.…”

Section: Kgw Single Crystal Growthmentioning

confidence: 99%

“…4, only one crystallographic plane (010) on the bottom of the growing crystal. Owing to this the as grown crystals had uniform distribution of neodymium.…”

Section: Kgw Single Crystal Growthmentioning

confidence: 99%

“…The spectral matching of diode radiation to the absorption bands of doped double tungstates makes it possible to obtain high pumping efficiency, single mode operation, and miniaturization of lasers. Two main double tungstates which find applications in diode pumped lasers fabrication are rare earth ions doped KGd(WO 4 ) 2 (KGW) 4 and KY(WO4) 2 (KYW) 5 single crystals. Owing to the possibility of Gd or Y ions substitution with rare earth ions in a very broad range, one can create single crystals having properties suitable for chosen applications.…”

Section: Introductionmentioning

confidence: 99%

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<title>Optical properties of doped potassium gadolinium tungstate single crystals</title>

et al. 2001

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“…The potassium double tungstates KGd(WO 4 ) 2 , KY(WO 4 ) 2 , and KLu(WO 4 ) 2 are excellent candidates for solid-state lasers [7] because of their high refractive index of ~2.0-2.1 [8], the large transition cross-sections of rare-earth (RE) ions doped into these hosts [9], a long interionic distance of ~0.5 nm that allows for large doping concentrations without lifetime quenching [10], and a reasonably large thermal conductivity of ~3.3 W m 1 K 1 [11]. These advantages have been exploited to demonstrate thin-disk lasers [12], broadly tunable [13] and high-energy ultrashort-pulse lasers [14], low-quantum-defect lasers [15], as well as planar [16][17][18] In this work we fabricate a double tungstate microstructured channel waveguide with further enhanced refractive index contrast of 1.5% and demonstrate a laser with an output power of 418 mW at 1023 nm, limited only by the available pump power.…”

Section: Introductionmentioning

confidence: 99%

High-power, broadly tunable, and  low-quantum-defect KGd_1-xLu_x(WO_4)_2:Yb^3+ channel waveguide lasers

Geskus¹,

Aravazhi²,

Wörhoff³

et al. 2010

Opt. Express

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Abstract:In KGd 1-x Lu x (WO 4 ) 2 :Yb 3+ channel waveguides grown onto KY(WO 4 ) 2 substrates by liquid phase epitaxy and microstructured by Ar + beam etching, we produced 418 mW of continuous-wave output power at 1023 nm with a slope efficiency of 71% and a threshold of 40 mW of launched pump power at 981 nm. The degree of output coupling was 70%. By grating tuning in an extended cavity and pumping at 930 nm, we demonstrated laser operation from 980 nm to 1045 nm. When pumping at 973 nm, lasing at 980 nm with a record-low quantum defect of 0.7% was achieved.

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Growth of β-KGd1 − xNdx(WO4)2 single crystals in K2W2O7 solvents

Cited by 90 publications

References 7 publications

Yb-doped KY(WO4)2 planar waveguide laser

Yb-doped KY(WO4)2 planar waveguide laser

<title>Optical properties of doped potassium gadolinium tungstate single crystals</title>

High-power, broadly tunable, and  low-quantum-defect KGd_1-xLu_x(WO_4)_2:Yb^3+ channel waveguide lasers

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Growth of β-KGd1 − xNdx(WO4)2 single crystals in K2W2O7 solvents

Cited by 90 publications

References 7 publications

Yb-doped KY(WO4)2 planar waveguide laser

Yb-doped KY(WO4)2 planar waveguide laser

<title>Optical properties of doped potassium gadolinium tungstate single crystals</title>

High-power, broadly tunable, and low-quantum-defect KGd_1-xLu_x(WO_4)_2:Yb^3+ channel waveguide lasers

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High-power, broadly tunable, and  low-quantum-defect KGd_1-xLu_x(WO_4)_2:Yb^3+ channel waveguide lasers