Growth of γ-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures

Huang, Yuan; Li, Zhenyu; Uen, Wu‐Yih; Lan, Shan-Ming; Chang, Kuei‐Chien; Xie, Z.J.; Chang, Jenq Yang; Wang, Shing-Chung; Shen, Ji‐Lin

doi:10.1016/j.jcrysgro.2007.11.174

Cited by 16 publications

(3 citation statements)

References 19 publications

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“…As a preface, it is worth noting that H 2 Se was recently detected (and implicated in) the traditional synthesis of widely used CdSe QDs by the reaction of Cd(II) carboxylates with triorganophosphine selenides R 3 PSe above 270 °C . In a more direct fashion, gaseous H 2 Se can be introduced as the selenium atom source to synthesize a wide range of different semiconducting selenides, including: the workhorse nanomaterial CdSe, ,− ZnSe, , In 2 Se 3 , , SnSe 2 , GeSe, the high-performing sodium-battery anode materials FeSe 2 and CoSe 2 , WSe, , EuSe, the tertiary selenides ZnSe x Te 1− x and CuInSe 2 , and the efficient solar cell materials Cu 2 ZnSnSSe 4 , and Cu(In,Ga)Se 2 (CIGS) . A related, and quite interesting, reaction is the high temperature formation of H 2 Se via hydrogen transfer between tetrahydronaphthalene and Se; the resulting H 2 Se gas is then reacted in situ with lead stearate to form PbSe .…”

Section: Molecular Hydrides Of the Group 16 Metals (Selenium And Tell...mentioning

confidence: 99%

Molecular Main Group Metal Hydrides

et al. 2021

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This review serves to document advances in the synthesis, versatile bonding, and reactivity of molecular main group metal hydrides within Groups 1, 2, and 12−16. Particular attention will be given to the emerging use of said hydrides in the rapidly expanding field of Main Group element-mediated catalysis. While this review is comprehensive in nature, focus will be given to research appearing in the open literature since 2001.

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Section: Molecular Hydrides Of the Group 16 Metals (Selenium And Tell...mentioning

confidence: 99%

Molecular Main Group Metal Hydrides

et al. 2021

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“…B = Se, Te), transition metal dichalcogenides [66][67][68][69] (MX 2 where M = Mo, W, Nb, etc and X = S and Se), group III [70] and group IV chalcogenides such as GaSe [71], In 2 Se 3 [72][73][74] SnS [75], SnS 2 [75], etc. As a result of the flexibility and control of precursor supply provided by gas source CVD, there has been renewed interest in its use for the synthesis of monolayer and few-layer chalcogenide films such as MoS 2 [76][77][78] and WSe 2 [79][80][81][82].…”

Section: Milestonesmentioning

confidence: 99%

A roadmap for electronic grade 2D materials

et al. 2019

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Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano-and atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping. 1-8 2D semiconductors such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go "beyond the bench", advances in large-scale, 2D layer synthesis and engineering must lead to "exfoliation-quality" 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications. The document is organized as follows:

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“…Among these indium selenide compounds, In 2 Se 3 has been extensively utilized in photovoltaic solar cells [2], high-performance photodetectors [3], ionic batteries [4], water splitting applications [5], and phase-change memory [6], owing to its tunable bandgap, high carrier mobility as well as good ambient stability. In 2 Se 3 as a lamellar structure crystal has two different bonding ways, in-plane atomic covalent bonding and interlayer weak van der Waals interaction, and may consist of at least five distinguishable phases, including α [7], β [8], γ [9], δ, and κ [10], depending upon the alignment of atomic configurations. Nevertheless, it should be noted that the practical application for optoelectronic devices based on In 2 Se 3 material has been limited, mostly due to the lack of cost-effective and large-area thin film synthesis techniques.…”

Section: Introductionmentioning

confidence: 99%

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

Zhu,

Liu,

Zheng

et al. 2023

Mater. Res. Express

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Indium selenide is a significant two-dimensional lamellar semiconductor with excellent physical properties whose enormous potential utilization in optoelectronic devices has been practically hindered by the lack of suitable thin film deposition techniques. Herein, γ-In2Se3 thin films were successfully fabricated from an InSe-target via magnetron sputtering combined with subsequent annealing process. The effects of sputtering pressure and annealing temperature on the characteristics of as-sputtered thin films were investigated. X-ray diffraction (XRD) patterns reveal that the pristine thin films are amorphous in nature, whereas transform into polycrystalline and are identified as γ-In2Se3 phase after annealing treatment. Growth mechanism of as-deposited layers combines a two-dimensional lateral growth and a three-dimensional island growth. As can be seen both from the scanning electron microscopy (SEM) figures and the atomic force microscopy (AFM) images, all samples are of uniform and compact structure with no evident holes and crevices. An UV-Vis-NIR spectrophotometer was employed to measure the optical transmittance and band gap of the synthesized thin films. The results show an obvious decrease in the band gap from 2.56 eV to 1.88 eV with annealing temperature increased from 400 ℃ to 600 ℃, respectively. In addition, the difficulty reasons for preparing monophase InSe thin films by magnetron sputtering method were discussed. These intriguing findings in this study may shed light on the growth of indium selenide thin films with well-crystallized and high quality.

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Growth of γ-In2Se3 films on Si substrates by metal-organic chemical vapor deposition with different temperatures

Cited by 16 publications

References 19 publications

Molecular Main Group Metal Hydrides

Molecular Main Group Metal Hydrides

A roadmap for electronic grade 2D materials

Effects of sputtering pressure and annealing temperature on the characteristics of indium selenide thin films

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