Growth optimization for self-catalyzed GaAs-based nanowires on metal-induced crystallized amorphous substrate

Ren, Dingding; Høiaas, Ida Marie; Reinertsen, Johannes F.; Dheeraj, Dasa L.; Munshi, A. Mazid; Kim, Dong Chul; Weman, H.; Fimland, B. O.

doi:10.1116/1.4943926

Cited by 6 publications

(5 citation statements)

References 27 publications

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“…This is very important in realizing heterostructures and will help expand the range of emission wavelengths. This also enables the growth of semiconductor NWs on dissimilar materials including III-V and III-nitride NWs on crystalline Si [5-7, 14, 28], polycrystalline or amorphous Si [29,30], and graphene [31][32][33]. Second, heterostructures can be realized in two distinct forms, namely, radial (core-shell) and axial (vertical) heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy

Motohisa

Kameda²,

Sasaki³

et al. 2019

Nanotechnology

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We report a systematic study on the current injection and radiative carrier recombination in InP nanowire (NW) light-emitting diodes (LEDs). The InP NWs with axial p-n structures, grown by selective-area metal organic vapor-phase epitaxy, had mixed crystal structures between those of zincblende and wurtzite, mainly in the p-regions. The temperature dependence of the currentvoltage (I-V ), electroluminescence (EL), and current-light output (I-L) characteristics was investigated. The temperature dependence of the I-V characteristics revealed that tunneling was the main mechanism of carrier transport through the p-n junction in the present NW-LEDs. The temperature and bias voltage dependences of EL showed a complex but systematic behavior, where peaks exhibiting bias-dependent and independent energy positions coexisted and the relative intensity showed a transition with increasing temperature. The external quantum efficiency showed a droop at low temperatures, indicating a reduced injection efficiency at low temperatures. These observations were explained by the radiative and nonradiative tunneling, and suggested a strong effect of the nonradiative tunneling at low temperatures.

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Section: Introductionmentioning

confidence: 99%

Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy

Motohisa

Kameda²,

Sasaki³

et al. 2019

Nanotechnology

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“…The self-catalyzed GaAs NW growth method was used to grow a Be-doped p-type GaAs NW core at 625 °C. Ga predeposition and a Be-doped GaAsSb stem (∼90 nm) growth step were adopted for 45 s and 1 min, respectively, to enhance the vertical yield of the NWs in the array . Ga, As 2 , and Sb 2 fluxes were 0.7 ML/s, 3 × 10 –6 , and 1 × 10 –7 Torr, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Ga predeposition and a Be-doped GaAsSb stem (∼90 nm) growth step were adopted for 45 s and 1 min, respectively, to enhance the vertical yield of the NWs in the array. 35 Ga, As 2 , and Sb 2 fluxes were 0.7 ML/s, 3 × 10 −6 , and 1 × 10 −7 Torr, respectively. Ga and Al fluxes are stated as equivalent to thin-film growth rates at 585 °C on a GaAs(001) substrate.…”

Section: Introductionmentioning

confidence: 94%

Origin of Leakage Currents and Nanowire-to-Nanowire Inhomogeneity in Radial p–i–n Junction GaAs Nanowire Array Solar Cells on Si

Mukherjee

Ren

Mosberg

et al. 2023

ACS Appl. Nano Mater.

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To realize the promising potential of radial junction nanowire (NW) array-based solar cells, it is crucial to get physical insight into how the overall photoconversion efficiency (PCE) is impacted by the hole mask properties, NW growth, and post-growth device processing. In this work, we have fabricated and analyzed a radial p−i−n junction GaAs NW array solar cell grown by molecular beam epitaxy (MBE) on a Si substrate. Multiple electrical measurements are correlated through a range of characterization techniques such as nanoprobing of as-grown individual NWs, multicontact single-NW studies, and structural characterization of the fabricated NW array solar cell. A relatively high leakage current density (∼120 mA/cm 2 at −1 V) was measured from the solar cell, resulting in a PCE of only ∼2.1%. The origin of this high leakage current was further investigated by measuring the electrical transport properties of individual as-grown NWs in the array through nanoprobing, revealing a high variation in electrical properties from NW to NW. In contrast to this, planar single-NW solar cells have shown rectifying characteristics with high on/off ratios and an average PCE of ∼5.2%, indicating a leakage path in the vertical configuration of the NWs. Furthermore, structural analysis of the NW array reveals a regular occurrence of NWs with off-centered nucleation for the p-GaAs NW core in the holes in the hole mask, leading to a partial or full electrical shortening of the n-GaAs NW shell to the p-Si substrate. This is shown to be predominantly responsible for the high leakage current density and poor PCE from the NW array solar cell. These findings will help to improve the structural design of radial junction NW array solar cells in order to further improve the PCE.

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“…[27] Besides growth on semiconductor substrates, these NWs can even be grown on graphitic and metal-induced crystalline Si substrates. InAsSb NWs on a graphite substrate show a morphology of aspect ratio over 100 with the assistance of In droplets during nucleation [28], and the growth of GaAsSb NWs on a metal-induced crystalline Si substrate shows a higher density of vertical NWs compared to the GaAs ones [29].…”

Section: The Growth Of Iii-as-sb Nwsmentioning

confidence: 99%

Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications

et al. 2019

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Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near-and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.

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Growth optimization for self-catalyzed GaAs-based nanowires on metal-induced crystallized amorphous substrate

Cited by 6 publications

References 27 publications

Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy

Characterization of nanowire light-emitting diodes grown by selective-area metal-organic vapor-phase epitaxy

Origin of Leakage Currents and Nanowire-to-Nanowire Inhomogeneity in Radial p–i–n Junction GaAs Nanowire Array Solar Cells on Si

Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications

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