Growth Optimization of InGaP/GaAs Dual Junction Solar Cells With Quantum Wells and a Distributed Bragg Reflector

Polly, Stephen J.; Bogner, Brandon; Fedorenko, Anastasiia; Pokharel, Nikhil; Ahrenkiel, Phil; Chowdhury, Subhra; Biswas, Dhrubes; Hubbard, Seth M.

doi:10.2139/ssrn.4219119

Cited by 3 publications

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“…Thin 1 nm GaAs transition layers are inserted at each As-P interface in the well region. This barrier layer design and interface sequence was found to facilitate the growth of high-quality quantum well regions [5], [20], [21]. Both X-ray diffraction measurements on calibration structures and in situ Laytec EpiCurveTT wafer curvature measurements on each device structure were used to confirm the SBQW region is effectively strain-balanced, typically exhibiting a slight compressive strain (< 700 ppm).…”

Section: Device Structures and Experimental Detailsmentioning

confidence: 99%

“…A FTER many years of research and development, highefficiency, single-junction, GaAs-based solar cells incorporating InGaAs quantum wells have recently been reported with one-sun open-circuit voltage (V oc ) greater than 1.02 V [1], [2], [3], [4], [5], [6]. These high-efficiency strain-balanced quantum well (SBQW) solar cell devices were achieved by improving the design and careful optimization of growth in the SBQW region, all while employing high-performance GaAs baseline cells.…”

Section: Introductionmentioning

confidence: 99%

“…This is a clear demonstration of a quantum well structure increasing the overall efficiency of a GaAs-based solar cell with a high open-circuit voltage (V oc > 1.02 V) while simultaneously using a radiation-tolerant, front-junction device structure. Moreover, the realization of GaAs-based SBQW solar cells with enhanced J sc and minimal V oc reduction opens a promising pathway for improving the performance of multijunction devices [2], [4], [5].…”

Section: Introductionmentioning

confidence: 99%

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Impact of Well Number on High-Efficiency Strain-Balanced Quantum-Well Solar Cells

Welser

Polly

Bogner

et al. 2023

IEEE J. Photovoltaics

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The addition of lower energy-gap InGaAs quantum wells to the depletion region of GaAs solar cells is an established approach to enhance photovoltaic performance by extending infrared collection. However, maintaining a high open-circuit voltage (V oc ) when including quantum wells has proven more challenging. In this article, we report on high-efficiency (η > 23.5% AM0) strainbalanced quantum well (SBQW) solar cells with increased current output and efficiency while maintaining the same high open-circuit voltage of baseline devices without quantum wells (V oc > 1.02 V). The single-junction GaAs-based device structures discussed herein employ a radiation-tolerant, n-i-p front-junction architecture and include both an InGaP heterojunction (HJ) emitter and in most cases an underlying AlGaAs distributed Bragg reflector.The impact of well number on photovoltaic device characteristics is described using an analytical model that assumes current collection, radiative recombination, and nonradiative recombination all increase with well number and are additive to the baseline cell. The highest V oc and efficiency SBQW devices employ shallow 9.2 nm In 0.07 Ga 0.93 As quantum wells and 11.5 nm GaAs 0.90 P 0.10 barrier layers to maintain strain balancing. Increasing the indium composition in the wells from 7% to 10% to form deeper wells requires a thicker strain-balancing barrier layer and results in an apparent increase in radiative recombination and decreased V oc . Single-junction high-efficiency SBQW device performance is also demonstrated in thinner base-layer structures with graded HJs-device structures suitable for inclusion in radiation-tolerant multi-junction structures.

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Section: Device Structures and Experimental Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Impact of Well Number on High-Efficiency Strain-Balanced Quantum-Well Solar Cells

Welser

Polly

Bogner

et al. 2023

IEEE J. Photovoltaics

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Design and optimization of ARC solar cell with intrinsic layer and p–n junction in bottom cell under AM1.5G standard spectrum

Songzhi

Sun

2023

emergent mater.

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AM0 Optimized Dual Junction Quantum Well Solar Cells-Investigation of Radiation Tolerance Designs and V_oc Retention at EOL

Bogner,

Polly,

Hubbard

et al. 2023

2023 IEEE 50th Photovoltaic Specialists Conference (PVSC)

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Growth Optimization of InGaP/GaAs Dual Junction Solar Cells With Quantum Wells and a Distributed Bragg Reflector

Cited by 3 publications

References 0 publications

Impact of Well Number on High-Efficiency Strain-Balanced Quantum-Well Solar Cells

Impact of Well Number on High-Efficiency Strain-Balanced Quantum-Well Solar Cells

Design and optimization of ARC solar cell with intrinsic layer and p–n junction in bottom cell under AM1.5G standard spectrum

AM0 Optimized Dual Junction Quantum Well Solar Cells-Investigation of Radiation Tolerance Designs and V_oc Retention at EOL

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Growth Optimization of InGaP/GaAs Dual Junction Solar Cells With Quantum Wells and a Distributed Bragg Reflector

Cited by 3 publications

References 0 publications

Impact of Well Number on High-Efficiency Strain-Balanced Quantum-Well Solar Cells

Impact of Well Number on High-Efficiency Strain-Balanced Quantum-Well Solar Cells

Design and optimization of ARC solar cell with intrinsic layer and p–n junction in bottom cell under AM1.5G standard spectrum

AM0 Optimized Dual Junction Quantum Well Solar Cells-Investigation of Radiation Tolerance Designs and Voc Retention at EOL

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AM0 Optimized Dual Junction Quantum Well Solar Cells-Investigation of Radiation Tolerance Designs and V_oc Retention at EOL