On semipolar GaN(101̄1), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of ZnO(101̄1)//GaN(101̄1) and [12̄10]ZnO//[12̄10]GaN. The other oriented ZnO domains then grow on faceted (101̄1) ZnO with ZnO(0002)//ZnO(101̄1) and [2̄110]ZnO//[11̄01̄]ZnO with good coherency with the (101̄1)‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)