Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

Sharma, Raj Kishore; Rastogi, A. C.; Kohli, Sandeep; Kang, Tae Won; Singh, Gurmeet

doi:10.1016/j.physb.2004.05.009

Cited by 15 publications

(2 citation statements)

References 23 publications

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“…This family of materials is interesting for optoelectronic applications because they have shown nonlinear optical properties, like nonlinear optical susceptibility combined with natural birefringence [1]. In particular, MnIn 2 S 4 is a very promising candidate for optoelectronic applications such as solar cell windows because it has an optical direct energy gap of 1.95 eV [2] that can be modified after suitable doping or by changing the cation concentration [3]. An important aspect of this semiconductor is that both cations Mn and In have nearly the same ionic radii for the same coordination [4].…”

Section: Introductionmentioning

confidence: 99%

Structural and optical high‐pressure study of spinel‐type MnIn₂S₄

Manjón¹,

Segura²,

Amboage³

et al. 2006

Physica Status Solidi (b)

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We report a combined study of the structural and electronic properties of the spinel-type semiconductor MnIn2S4 under high pressures by means of X-ray diffraction (ADXRD), X-ray absorption (XAS), and op- tical absorption measurements. The three techniques evidence a reversible structural phase transition near 7 GPa, that according to ADXRD measurements is to a double-NaCl structure. XAS measurements evi- dence predominant tetrahedral coordination for Mn in the spinel phase that does not noticeably change with increasing pressure up to the phase transition. XAS measurements indicate that the static disorder in- creases considerably when the sample reverts from the double-NaCl phase to the spinel phase. Optical ab- sorption measurements show that the direct gap of MnIn2S4 exhibits a nonlinear behaviour with a positive pressure coefficient at pressures below 2.5 GPa and a negative pressure coefficient between 2.5 and 7 GPa. The pressure behavior of the bandgap seems to be affected by the defect concentration. The dou- ble-NaCl phase also exhibits a bandgap with a negative pressure coefficient

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Section: Introductionmentioning

confidence: 99%

Structural and optical high‐pressure study of spinel‐type MnIn₂S₄

Manjón¹,

Segura²,

Amboage³

et al. 2006

Physica Status Solidi (b)

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confidence: 99%

Optical absorption in layered MnGaInS4 single crystals

Niftiev

Тагиев

2012

Opt. Spectrosc.

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Recently, multicomponent compounds of the AB 2 X 4 type (A is Mn, Fe, Co, or Ni; B is Ga or In; and X is S, Se, or Te) have been of great interest because they can expand the functional possibilities of modern semiconductor electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. These compounds are promising for semiconductor devices of various functional purposes. Photosensitive structures were prepared based on these materials [7,8], heterojunc tions were fabricated on the basis of FeIn 2 Se 4 crystals [9], and nanostructures were synthesized from FeIn 2 S 4 and MnIn 2 S 4 compounds [10-12].New layered semimagnetic MnGaInS 4 semicon ductors were obtained in [13,14]. The electric, photo electric, and optical properties of MnGaInS 4 single crystals were analyzed in [15][16][17][18][19][20].We studied the optical absorption spectra of MnGaInS 4 single crystals in polarized and unpolarized light. MnGaInS 4 single crystals were grown by the Bridgman method. X ray diffraction analysis revealed that they are crystallized into the structure of single packet ZnIn 2 S 4 polytype with the lattice parameters а = 8.31 Å, с = 12.17 Å, and z = 1 (space group Р3m1) [13]. The spectral dependence α(hν) for MnGaInS 4 single crystals was measured in the temperature range of 77-300 K and at photon energies of 2.34-2.80 eV with a system based on an MDR 12 monochromator. Different single crystal samples 10-200 µm thick were investigated.The results of measuring α(hν) in unpolarized light at different temperatures are shown in Fig. 1. It can be seen that the dependence α(hν) becomes blue shifted with a decrease in temperature from 270 to 83 K. In this case, α(hν) in the range of photon energies of 2.37-2.74 eV changes from 2000 to 7000 cm -1 .These results were analyzed according to the theory of indirect and direct optical transitions [21][22][23][24]. The dependence α(hν) can be written aswhere α d , α i , and α b are, respectively, the optical absorption coefficients at direct transitions, at indirect transitions, and under background absorption. The CONDENSED MATTER SPECTROSCOPYAbstract-Optical absorption in MnGaInS 4 single crystals has been studied. Direct and indirect optical tran sitions are found to occur in the range of photon energies of 2.37-2.74 eV and in the temperature range of 83-270 K. The temperature dependence of the band gap has been determined; its temperature coefficients E gd and E gi are -5.06 × 10 -4 and -5.35 × 10 -4 eV/K, respectively. MnGaInS 4 single crystals exhibit anisot ropy in polarized light at the absorption edge; the nature of this anisotropy is explained.

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A Self‐Sacrificing Template Route to Spinel M^IIIn₂S₄ (M^II = Mn, Zn, Cd, Fe, Co, Ni) and M^IIn₅S₈ (M^I = Cu, Ag) Porous Microspheres

Lei

Tang

et al. 2006

Eur J Inorg Chem

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A facile, self‐sacrificing template route has been developed to synthesize spinel MIIIn2S4 (MII = Mn, Zn, Cd, Fe, Co, Ni) and MIIn5S8 (MI = Cu, Ag) porous microspheres. The BET surface areas of the products are around 70 m2 g–1. The urchin‐like In2.77S4 microspheres precursor acts as both starting material and template to confine the growth of the final products. The phase structures and morphologies of the products were characterized by X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and electron diffraction. Possible formation process and growth mechanism for the porous structure are proposed based on the experimental results. (© Wiley‐VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2006)

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Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

Cited by 15 publications

References 23 publications

Structural and optical high‐pressure study of spinel‐type MnIn₂S₄

Structural and optical high‐pressure study of spinel‐type MnIn₂S₄

Optical absorption in layered MnGaInS4 single crystals

A Self‐Sacrificing Template Route to Spinel M^IIIn₂S₄ (M^II = Mn, Zn, Cd, Fe, Co, Ni) and M^IIn₅S₈ (M^I = Cu, Ag) Porous Microspheres

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Growth phases in the formation of semiconducting manganese indium sulphide thin film and their effect on the optical absorption

Cited by 15 publications

References 23 publications

Structural and optical high‐pressure study of spinel‐type MnIn2S4

Structural and optical high‐pressure study of spinel‐type MnIn2S4

Optical absorption in layered MnGaInS4 single crystals

A Self‐Sacrificing Template Route to Spinel MIIIn2S4 (MII = Mn, Zn, Cd, Fe, Co, Ni) and MIIn5S8 (MI = Cu, Ag) Porous Microspheres

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Product

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Structural and optical high‐pressure study of spinel‐type MnIn₂S₄

Structural and optical high‐pressure study of spinel‐type MnIn₂S₄

A Self‐Sacrificing Template Route to Spinel M^IIIn₂S₄ (M^II = Mn, Zn, Cd, Fe, Co, Ni) and M^IIn₅S₈ (M^I = Cu, Ag) Porous Microspheres