Growth pressure effects on Si/Si1−xGex chemical vapor deposition

Matutinovic-Krstelj, Z.; Chason, E.; Sturm, James C.

doi:10.1007/bf02659731

Cited by 8 publications

(5 citation statements)

References 13 publications

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“…For a fixed gas phase composition, the Ge content of the SiGe film linearly decreases as the deposition temperature increases. Such a behaviour has already been observed by several authors [42][43][44][45][46][47]. Interference fringes evidence the good crystallographic quality of the heterostructures as well as the abruptness of the Si buffer/Si 1−y C y and Si 1−y C y /Si cap interfaces.…”

Section: Sigec Growth Kineticssupporting

confidence: 75%

Reduced pressure chemical vapour deposition of Si/Si_1 x yGe_xC_yheterostructures using a chlorinated chemistry

Loup

Hartmann

Rolland

et al. 2003

Semicond. Sci. Technol.

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We have studied in reduced-pressure chemical vapour deposition the influence of the growth temperature on the interstitial-substitutional carbon incorporation ratio in SiGeC using dichlorosilane as the Si gas precursor. X-ray diffraction and secondary ion mass spectrometry were used in order to determine the substitutional and the total (interstitial + substitutional) carbon concentrations in the layers. Si/Si 1−y C y tensile-strained heterostructures were grown at 650 • C. The highest substitutional carbon concentration incorporated is around 0.75% (with a large amount of interstitial C atoms (also 0.75%), however). Low Ge concentration Si 1−x−y Ge x C y layers have also been grown. We have managed through the increase of the SiCH 6 mass flow to tailor the Si 1−x−y Ge x C y layer strain from compressive to tensile. The highest substitutional carbon concentrations obtained are 1.82% (0.95%) for growth temperatures of 600 • C (650 • C). Finally, compressively strained high Ge concentration Si 1−x−y Ge x C y layers with up to 3.20% (2.49% and 1.41%) in substitutional carbon atoms were grown at 550 • C (600 • C and 650 • C). The growth temperature does not seem to impact upon the total carbon concentration C T in these layers. Its dependence on the F(SiCH 6 )/(F(SiH 2 Cl 2 ) + F(GeH 4 )) mass flows ratio is indeed rather well fitted using the following relationship: C T 1.4 (1 − C T ) = q(F(SiCH 6 )/ (F(SiH 2 Cl 2 ) + F(GeH 4 )), with q in between 0.38 and 0.34 for the 550-650 • C temperature range. However, the more the temperature increases, the more the substitutional/interstitial carbon incorporation ratio is reduced.

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Section: Sigec Growth Kineticssupporting

confidence: 75%

Reduced pressure chemical vapour deposition of Si/Si_1 x yGe_xC_yheterostructures using a chlorinated chemistry

Loup

Hartmann

Rolland

et al. 2003

Semicond. Sci. Technol.

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“…This well-known behavior was noticed for a SiH 2 Cl 2 ϩGeH 4 chemistry both in AP CVD 31,32 and in rapid thermal ͑RT͒ CVD. 11,33,34 This is due to a lowering of the H surface coverage when a limited amount of chemically adsorbed Ge atoms is present on the surface. The Ge atoms act as desorption centers, lowering the activation energy for hydrogen desorption from the growing surface ͑activation barriers for hydrogen desorption from Si ͑001͒: 47 kcal mol Ϫ1 , 35 from Ge ͑001͒: 37 kcal mol Ϫ1 ).…”

Section: B Sige Growth Ratementioning

confidence: 99%

Effects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure–chemical vapor deposition

Hartmann

Loup

Rolland

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Using a reduced pressure chemical vapor deposition cluster tool, we have studied at 20 Torr the growth kinetics of SiGe using a dichlorosilane+germane+hydrochloric acid chemistry. Adding HCl leads at 700 °C to a significant increase in the germanium content x of SiGe layers. Adopting a x2/(1−x)=n(F(GeH4)/F(SiH2Cl2)) dependence of x on the F(GeH4)/F(SiH2Cl2) mass flow ratio, this translates into an n value linearly increasing with the HCl mass flow from n=0.66 (no HCl) up to n=2.24 (F(HCl)/F(H2)=0.00625). The SiGe growth rate increases strongly with an increasing GeH4 flow. This is attributed to an increased hydrogen desorption caused by the presence of Ge atoms on the growing surface that frees nucleation sites for the incoming Ge and Si atoms. Meanwhile, adding HCl leads to a strong, linear reduction of the SiGe growth rate with the HCl mass flow. As expected, the Ge concentration decreases significantly as the growth temperature increases from 650 to 750 °C. The associated n parameter depends exponentially on the reverse absolute temperature, with an “activation energy” of the order of −15 kcal mol−1. At the same time, the SiGe growth rate increases strongly as the growth temperature increases, with an activation energy dropping from 47 down to 12 kcal mol−1 as the Ge content in the film goes up (from 0% up to 27% at 700 °C).

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“…As already shown in the literature, there was a linear increase of the intrinsic SiGe growth with the germane partial pressure whatever the temperature and the HCl partial pressure. In previous publications (21)(22)(23)(24)(25)(26)(27)(28), such a growth rate increase was explained by the presence of Ge atoms on the surface acting as desorption centers, lowering the activation energy for H desorption and freeing nucleation sites for the adsorption of Si or Ge atoms. Meanwhile, a lower surface coverage of the surface by hydrogen atoms explained why growth rates were higher at higher temperature.…”

Section: Growth Kinetics Of Mono and Polycrystalline Intrinsic Si And...mentioning

confidence: 93%

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

Lespiaux¹,

Deprat²,

Vives³

et al. 2022

ECS Trans.

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In this paper, epitaxial growths or depositions were performed, in 300 mm RP-CVD chambers, on two types of templates: N-type Si substrates or poly-Si/oxide/ P-type Si substrates. SiH4+HCl+H2 and SiH2Cl2+HCl+GeH4+H2 chemistries were used to deposit Si and SiGe layers between 675-750°C and 10-20 Torr on such wafers. Monocrystalline and polycrystalline growth kinetics were similar for intrinsic SiGe. Meanwhile, growth kinetics and boron incorporation were different for mono-Si:B, mono-SiGe:B, poly-Si:B and poly-SiGe:B layers. While the impact of B atoms is well documented in monocrystalline layers, it is still poorly understood for polycrystalline layers. An attempt has therefore been made to quantify it by measuring the poly-structure, with a focus on the poly-grains size and the number of grain boundaries. A lattice contraction coefficient β = - 9.82 * 10-24 cm3 has otherwise been extracted from an in-depth study of the incorporation of B atoms into substitutional sites of the SiGe epitaxial lattice.

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Growth pressure effects on Si/Si1−xGex chemical vapor deposition

Cited by 8 publications

References 13 publications

Reduced pressure chemical vapour deposition of Si/Si_1 x yGe_xC_yheterostructures using a chlorinated chemistry

Reduced pressure chemical vapour deposition of Si/Si_1 x yGe_xC_yheterostructures using a chlorinated chemistry

Effects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure–chemical vapor deposition

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

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Growth pressure effects on Si/Si1−xGex chemical vapor deposition

Cited by 8 publications

References 13 publications

Reduced pressure chemical vapour deposition of Si/Si1 x yGexCyheterostructures using a chlorinated chemistry

Reduced pressure chemical vapour deposition of Si/Si1 x yGexCyheterostructures using a chlorinated chemistry

Effects of temperature and HCl flow on the SiGe growth kinetics in reduced pressure–chemical vapor deposition

Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

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Reduced pressure chemical vapour deposition of Si/Si_1 x yGe_xC_yheterostructures using a chlorinated chemistry

Reduced pressure chemical vapour deposition of Si/Si_1 x yGe_xC_yheterostructures using a chlorinated chemistry