Growth process and mechanism of SiC layer deposited by CVD method at normal atmosphere

Surface Optimization of ZrC–SiC Inner Layer to Enhance Ablation Property of SiC/ZrC–SiC Multi-Layer Coating for C/C Composites

“…However, with the decreased roughness of the inner layer, the mushroom morphologies surface became smoother and flattened. According to the SCF theory, the liquid droplets first formed on the matrix and then crystallized into SiC coating [29,31]. The porous and rugged inner layer limited the surface diffusion of liquid droplets, resulting in a reduced fusion of liquid droplets in the growth process.…”

“…01-1119). A relatively low-temperature tends to the formation of cubic SiC crystal structure [17,29]. From Figure 5b−e, it can be seen that all the SiC surfaces revealed a typical mushroom structure, which is due to the supersaturation-condensation-fusion (SCF) process and nucleation mechanism of SiC growth at relatively low temperatures [30].…”

The effect of the decomposition of CH4 gas on polycrystalline SiC coating on SiC ceramics using Si vapor

“…Coating ceramics with SiC via CVD is one effective way to cover multiple pores on their surface. Various reactions for CVD on SiC using various kind of precursors such as SiH 4 and CH 3 Cl 2 , and SiCl 4 -H 2 -C 3 H 8 system, 7) SiO and toluene, 8) CH 3 SiCl 3 , [9][10][11][12] and SiH 4 and hydrocarbon [13][14][15] have been reported. According to a study by O. Danielsson et al 15) in which 24 chemical reactions of decomposition from CH 4 were investigated, C 2 H 2 was indicated to be the dominant carbon source in the vapor deposition of SiC.…”