Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Wang, Yan-shen; Zhu, Ming-zhi; Liu, Yuan

doi:10.1007/s41230-024-4131-5

China Foundry

2024

DOI: 10.1007/s41230-024-4131-5

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Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Yan-shen Wang,

Ming-zhi Zhu,

Yuan Liu

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2024

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kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

Li,

Chiang,

Wan

et al. 2024

Journal of Vacuum Science &Amp; Technology A

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100 μm diameter Schottky and heterojunction vertical Ga2O3 rectifiers were fabricated on ∼10 μm thick drift layers grown on 4-in. diameter bulk Ga2O3 substrates. The uniformity of breakdown voltage was measured on 50 heterojunction devices over a quadrant of the wafer and showed variations from 2 to 8.5 kV, with the higher range correlating with thicker drift layers and lower background doping levels. The median breakdown voltage was ∼6 kV in this area and ∼3 kV in the areas with thinner drift layers and higher doping levels. By contrast, Schottky rectifier breakdown voltages were 0.7–1.8 kV. The minimum on-resistances were in the range of 4–7 mΩ cm2 for Schottky barrier diodes and 5–9 mΩ cm2 for heterojunction diodes, with on-voltages of 0.6–0.75 V for the former and 1.7–1.75 for the latter. The results show the promise of large diameter Ga2O3 substrates in providing high numbers of kV-class rectifiers for electric vehicle charging and other applications.

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kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

Li,

Chiang,

Wan

et al. 2024

Journal of Vacuum Science &Amp; Technology A

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show abstract

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Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals

Cited by 1 publication

References 106 publications

kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

kV-class Ga2O3 vertical rectifiers fabricated on 4-in. diameter substrates

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