Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates

Xiao, Hongdi; Liu, Rong; Liu, Jianqiang; Lin, Zhaojun; Mei, Liangmo

doi:10.1016/j.vacuum.2009.04.052

Cited by 14 publications

(6 citation statements)

References 20 publications

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“…From the PL fitting spectrum of the GaN film in figure 3, we can see the 500 nm (2.48 eV) green luminescence emission band, it can be attributed to the presence of deep-level oxygen impurity defects or to Ga and N vacancies [36][37][38]. Thus, carrier radiative recombination due to Ga vacancies and oxygen impurity may create V Ga -O N complexes, and the resulting energy band gap transitions in the GaN film with amorphous structure could also be responsible for the PL emission peak at 500 nm [39][40][41].…”

Section: Resultsmentioning

confidence: 99%

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Liu

Chang

Chen

et al. 2023

Semicond. Sci. Technol.

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DC-pulse magnetron sputtering was used to deposit a 300-nm-thick Si–Sn codoped n-type GaN film on an amorphous glass substrate with a ZnO buffer layer. Postgrowth thermal annealing at 300, 400, or 500 °C was performed to improve the crystal quality of the GaN thin films. Hall measurements revealed that the film annealed at 500 °C had the lowest thin-film resistance of 0.82 Ω cm and highest carrier concentration of 3.84 × 1019 cm−3. Atomic force microscopy was used to investigate the thin-film surface morphology; the film annealed at 500 °C had an average grain size and surface roughness of 25.3 and 2.37 nm, respectively. Furthermore, the X-ray diffraction (XRD) measurements revealed a preferential (002) crystal orientation and hexagonal wurtzite crystal structure at 2θ ≈ 34.5° with a narrow full width at half maximum value of 0.387°. Compositional analysis of the films was conducted with Xray photoelectron spectroscopy and verified that both Si and Sn were doped into the GaN film by means of covalent bonding with N atoms. Finally, the film annealed at 500 °C had a high optical transmittance of 82.9% at 400–800 nm, a high figure of merit factor of 490.3 ×10−3 Ω−1, and low contact resistance of 567 Ω; these excellent optoelectronic properties were attributed to the film’s high electron concentration and indicate that the material is feasible for application in transparent optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Liu

Chang

Chen

et al. 2023

Semicond. Sci. Technol.

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“…The diffraction peaks observed in Figure 2 are in good agreement with the Joint Committee for Powder Diffraction Standards (JCPDS) data for bulk GaN in the wurtzite phase. Three peaks corresponding to crystalline planes (002), (102) and (110) are located at 34.58°, 48.56° and 57.66°, respectively, demonstrating that the films can be indexed to the hexagonal GaN phase with lattice constants a¼ = 3.191 Å and c¼ = 5.192 Å [ 18 , 19 ]. The more intense peaks reported for wurzite GaN (PDF number 897522) are the (101) and (100) which are expected at 2θ = 36.84° and 32.39°, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…Room temperature PL spectra of GaN films grown on different substrates are shown in Figure 4 , Figure 5 and Figure 6 . These graphs contain a strong near band-gap-edge emission (NBE) and a broad blue, green and yellow luminescence (BL, GL, YL), which are due to the presence of Ga and N vacancies, oxygen or deep level impurities, and amorphous phases [ 12 , 19 , 20 ]. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy (shown with a red arrow in Figure 4 ).…”

Section: Resultsmentioning

confidence: 99%

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

et al. 2013

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Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL) centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case.

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“…The spectra reveal that the GaN NRs grown on Si at 1000 • C exhibit the strongest bandedge emission, which is centered at around 362 nm. An additionally broad yellow band emission, centered at approximately 560 nm, can also be observed, which is thought to originate from the impurities incorporated during growth [24]. For lower growth temperatures, the NRs possess weak luminescence, which is dominated by the yellow band emission.…”

Section: Optical Propertiesmentioning

confidence: 96%

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

et al. 2017

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Abstract:We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB 2 /Si, ZrB 2 /SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB 2 /Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology.

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Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates

Cited by 14 publications

References 20 publications

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Si–Sn codoped n-GaN film sputtering grown on an amorphous glass substrate

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

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