Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Hu, Congyu; Saito, Katsuhiko; Tanaka, Tooru; Guo, Qi

doi:10.1088/1674-4926/40/12/122801

Cited by 6 publications

(7 citation statements)

References 30 publications

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“…Thin film deposited with mist‐generation intensity of 10% showed the comparatively smoother surface than thin films deposited with higher mist intensity. Reported RMS roughness range of gallium oxide thin film are 0.16–1.830 nm for ALD, [ 28–30 ] 1–6.3 nm for pulse laser deposition, [ 31,32 ] 0.38–3.91 nm for MOCVD, [ 33–35 ] and 0.4–3 nm for sputtering, [ 36,37 ] which are similar to RMS surface roughness obtained in this work. Hence, this proves that it is possible to achieve superior and ultrasmooth thin films using this low‐cost and simple deposition method.…”

Section: Resultssupporting

confidence: 83%

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Ganguly,

Nama Manjunatha,

Paul

2023

Physica Rapid Research Ltrs

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In this study, a novel, simple, and robust mist chemical vapor deposition is demonstrated, compatible with existing industrial practices to deposit gallium oxide thin films and influence of mist intensity on the properties of gallium oxide. The intensity of the mist generation is optimized to obtain smooth and uniform thin films. The thin film deposited in this work is mixed phase polycrystalline gallium oxide. Ultraviolet–visible–near‐infrared spectroscopy and photo response of thin film unveil that gallium oxide thin film is responsive to ultraviolet wavelengths including deep ultraviolet‐C and ultraviolet‐B bands and the mist‐generation intensity has negligible influence on the bandgap of the thin film. Thickness of thin film can be altered by varying the mist intensity. It is observed that there is no appreciable impact on refractive index of varying mist intensity. Morphological studies prove the formation of ultrasmooth thin film with root mean square value of 0.628 nm; which is closer and/or better than conventional semiconductor thin‐film deposition processes used for depositing Ga2O3.

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Section: Resultssupporting

confidence: 83%

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Ganguly,

Nama Manjunatha,

Paul

2023

Physica Rapid Research Ltrs

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“…In all these methods, a liquid phase of Ga 2 O 3 which will crystallize into β−Ga 2 O 3 on the seed materials is needed. For growth of β−Ga 2 O 3 epitaxial layers, MOCVD [109], MBE [110], and pulse laser deposition (PLD) [111],…”

Section: Growth Methodsmentioning

confidence: 99%

Thermal conductivity of wide and ultra-wide bandgap semiconductors

Tran

2023

Linköping Studies in Science and Technology. Dissertations

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This PhD thesis presents experimental and theoretical studies of the thermal conductivity of wide and ultra-wide bandgap semiconductors including GaN, AlN, β-Ga 2 O 3 binary compounds, and Al x Ga 1−x N, Sc x Al 1−x N, Y x Al 1−x N ternary alloys. Thermal conductivity measurements are conducted using the transient thermoreflectance (TTR) technique and the results are interpreted using analytical models based on the solution of the Boltzmann transport equation (BTE) within the relaxation time approximation (RTA).The study is motivated by the increasing research interest in these material systems due to their potential for the development of high-power (HP) and high-frequency (HF) electronic devices. Due to its wide bandgap, high electrical field, and high electronic saturation velocity, GaN is an excellent material for fast-switching HP electronic devices. Al x Ga 1−x N is considered a natural choice for next-generation HP electronic devices since by tuning the bandgap from 3.4 eV to 6 eV a significant increase of the critical electric field and thus the device breakdown voltage, can be achieved. Furthermore, both nand p-type conductivity can be realized in AlGaN allowing flexible device design. β-Ga 2 O 3 is also promising for HP electronics because of its ultra-wide bandgap (4.8 eV) and a very high Baliga's figure of merit (FOM) exceeding by far that of GaN. Moreover, the mature growth techniques of bulk β-Ga 2 O 3 can enable low-cost substrates with high crystal quality. Sc x Al 1−x N and Y x Al 1−x N have recently emerged as PREFACE This Ph.D. thesis is written based on the research results accumulated during the graduate studies of Tran Quoc Dat at the Center for III-Nitride Technology (C3NiT-Janzen), the Department of Physics, Chemistry and Biology in the Linköping University from September 2018 to August 2023. The thesis is based on scientific papers and contains two main parts: the first part provides an introduction to the research field and the second part presents the main research results summarized in six scientific papers. The dissertation is a continuation of the work presented in my Licentiate thesis (No. 1908; Linköping Studies in Science and Technology, ISBN 978-91-7929-629-2).The graduate studies were accomplished under the financial supports (i) the Swedish

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“…In all these methods, a liquid phase of Ga 2 O 3 which will crystallize into β−Ga 2 O 3 on the seed materials, is needed. For growth of the β−Ga 2 O 3 epitaxial layers, MOCVD [86], Molecular Beam Epitaxy (MBE) [87], and Pulse Laser Deposition (PLD) [88], are commonly used. In all these methods, a good control of the layer thickness, crystal quality, and impurity incorporation has been achieved.…”

Section: Growth Methodsmentioning

confidence: 99%

“…At a high enough heating, atoms or clusters of atoms are ejected from the source material, form a plasma, and directed to the surface of a substrate, which is heated up to a suitable temperature. In the process, extra oxygen gas has to be supplied in order to avoid the formation of oxygen vacancies [88].…”

Section: Growth Methodsmentioning

confidence: 99%

Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

Dat

2021

Linköping Studies in Science and Technology. Licentiate Thesis

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For the high-power (HP) electronic applications the existing Si-based devices have reached the performance limits governed by the material properties. Hence the device innovation itself is unable to enhance the overall performance. GaN, a semiconductor with wide bandgap, high critical breakdown field, and high electronic saturation velocity is regarded as an alternative of Si. The material properties of GaN make it very suitable for fast-switching HP electronic devices and contribute to the fast growing of GaN technology.The state-of-the-art GaN devices operating up to 650 V have recently become commercially available. Further goal is to reach higher breakdown voltage which can be done via device engineering and material growth optimization.Al x Ga 1−x N is an ultrawide-bandgap (UWBG) semiconductor which is considered as a natural choice for next generation in the development of GaN-based HP electronic devices. This material attracts particular interest due to the possibility for bandgap tuning from 3.4

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Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

Cited by 6 publications

References 30 publications

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

Thermal conductivity of wide and ultra-wide bandgap semiconductors

Thermal conductivity of AlXGa1-XN and β-Ga2O3 semiconductors

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