Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

Danielsson, Örjan; Henry, Anne; Janzén, Erik

doi:10.1016/s0022-0248(02)01486-0

Cited by 94 publications

(142 citation statements)

References 51 publications

Supporting

Mentioning

138

Contrasting

Order By: Relevance

“…Modeling of CVD-related phenomena has been carried out by many different methods, depending on the time and length scales of the phenomena. For calculations in macroscale (reactor scale), computational fluid dynamic (CFD) is a powerful method which has been applied to various types of CVD processes and materials allowing predictions of heat and flow distributions inside the growth chamber, types and concentration profiles of gaseous molecules and radicals, profiles of growth rates and doping [37][38][39][40] . Usage of CFD ranges from designing of reactor geometry to process control.…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

“…Usage of CFD ranges from designing of reactor geometry to process control. CFD studies of SiC CVD were reported in Ref 38,[41][42][43] .…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

“…The methods for solving the mass and heat transport equations are well developed and the calculations are reliable 38,42 . The chemical reactions occurring during CVD can be divided into a gas-phase part and a surface part.…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

“…For SiC deposition, the gas phase part involves C-Si-H-halide containing species. The reactions involving C-H and Si-H species, both experimental and theoretical data, are available in the literature 38,41,[44][45][46][47] and recently Cl-related reactions [48][49][50][51] have also become available based on ab initio and density functional theory (DFT) calculations. The data have been used extensively in CFD modeling 36,[51][52][53] .…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

See 3 more Smart Citations

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

View full text Add to dashboard Cite

SiC is a wide bandgap semiconductor with many attractive properties. It has attracted particular attentions in the areas of power and sensor devices as well as biomedical and biosensor applications. This is owing to its properties such as large bandgap, high breakdown electric field, high thermal conductivities and chemically robustness. Typically, SiC homoepitaxial layers are grown using the chemical vapor deposition (CVD) technique. Experimental studies of SiC CVD have been limited to post-process measuring of the layer rather than in situ measurements. In most cases, the observations are presented in terms of input conditions rather than in terms of the unknown growth condition near the surface. This makes it difficult to really understand the underlying mechanism of what causes the features observed experimentally. With help of computational methods such as computational fluid dynamic (CFD) we can now explore various variables that are usually not possible to measure. CFD modeling of SiC CVD, however, requires inputs such as thermochemical properties and chemical reactions, which in many cases are not known. In this thesis, we use quantum chemical calculations to provide the missing details complementary to CFD modeling.We first determine the thermochemical properties of the halides and halohydrides of Si and C species, SiHnXm and CHnXm, for X being F, Cl and Br which were shown to be reliable compared to the available experimental and/or theoretical data. In the study of gas-phase kinetics, we combine ab initio methods and DFTs with conventional transition state theory to derive kinetic parameters for gas phase reactions related to Si-H-X species. Lastly, we study surface adsorptions related to SiC-CVD such as adsorptions of small C-H and Si-H-X species, and in the case of C-H adsorption, the study was extended to include subsequent surface reactions where stable surface products may be formed. iv SammanfattningSiC är ett halvledarmaterial med stort bandgap som har många attraktiva egenskaper. Det har fått särskilt mycket uppmärksamhet inom kraftkomponenter och sensorer, men också för tillämpningar inom biomedicin och biosensorer. Detta beror på materialets stora bandgap, förmågan att klara höga elektriska fält, goda värmeledningsförmåga och kemiska stabilitet. Epitaxiska skikt av SiC för kommersiella tillämpningar tillverkas med hjälp av kemisk ångdepo-sition (Chemical Vapor Deposition, CVD). Experimentella studier av SiC CVD begränsas till mätningar som görs i efterhand, snarare än under processens gång. För det mesta görs observationer med utgångspunkt från processens ingångsvärden istället för från de okända tillväxtförhållandena vid ytan. Detta gör det svårt att verkligen förstå de underliggande mekanismerna för de observerade experimentella resultaten. Med hjälp av beräkningsmetoder, såsom computational fluid dynamics (CFD) kan vi utforska olika variabler som vanligtvis inte går att mäta. Dock kräver CFD-modellering av SiC CVD ingångs-data i form av termokemiska egenskaper och kemiska reaktion...

show abstract

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

“…Usage of CFD ranges from designing of reactor geometry to process control. CFD studies of SiC CVD were reported in Ref 38,[41][42][43] .…”

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

Section: Present Status Of Sic-cvd Process Modelingmentioning

confidence: 99%

See 2 more Smart Citations

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Sukkaew¹

2017

Linköping Studies in Science and Technology. Dissertations

View full text Add to dashboard Cite

show abstract

“…In addition the model of Ho et al [10] is included to account for reactions between silicon species, with the purpose to be able to determine if the deposition is limited by carbon or silicon. The gas-phase model of Ho for the silicon species was chosen because it has been shown previously that it can give very accurate results for deposition rates in a silicon limited growth regime [1]. At this stage no organosilicon species (i.e.…”

Section: Model Setupmentioning

confidence: 99%

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Danielsson

Sukkaew

Yazdanfar

et al. 2013

MSF

View full text Add to dashboard Cite

Abstract. Numerical simulations are one way to obtain a better and more detailed understanding of the chemical vapor deposition process of silicon carbide. Although several attempts have been made in this area during the past ten years, there is still no general model valid for any range of process parameters and choice of precursors, that can be used to control the growth process, and to optimize growth equipment design. In this paper a first step towards such a model is taken. Here, mainly the hydrocarbon chemistry is studied by a detailed gas-phase reaction model, and comparison is made between C 3 H 8 and CH 4 as carbon precursor. The results indicate that experimental differences, which previous models have been unable to predict, may be explained by the new model.

show abstract

Epitaxial Growth of Silicon Carbide

Kimoto¹,

Cooper

2014

Fundamentals of Silicon Carbide Technology

View full text Add to dashboard Cite

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

Cited by 94 publications

References 51 publications

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

A Quantum Chemical Exploration of SiC Chemical Vapor Deposition

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Epitaxial Growth of Silicon Carbide

Contact Info

Product

Resources

About