Growth Simulation and Actual MBE Growth of Triangular GaAs Nanowires on Patterned (111)B Substrates

Abstract

Attempts were made to further elaborate our experimental growth method and the theoretical growth simulation method for formation of AlGaAs/GaAs QWRs on the (111)B substrates, paying attention to Al composition dependence of growth. A series of repeated growth experiments were carried out on simple one-sided mesa patterns, and from their analysis of the results led to determination of parameter values needed for computer simulation based on the continuum model. The experimental evolution of the cross-sectional structures was well reproduced by simulation, not only on one-side mesa, but also on mesa stripes actually used for wire growth. Finally, an optimum growth design was derived for growth of an array of GaAs triangular QWRs with 40 nm base width on GaAs (111)B substrate by the simulation, and the actual growth experiment confirmed its realization.

Selective molecular beam epitaxy growth of size- and position-controlled GaN∕AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism

“…[7][8][9][10] Recently, we have reported successful selective MBE growth of InP-based 11 and GaAs-based 12,13 QWRs. They included ͗−110͘-oriented QWRs on ͑001͒ substrates and ͗−1-12͘-oriented wires on ͑111͒B substrates.…”