We describe the output performances of the 916 nm 4F3/2 → 4I9/2 transition in Nd:LuVO4 under in‐band pumping with diode laser at the 880 nm wavelength, directly into the 4F3/2 emitting level. An end‐pumped Nd:LuVO4 crystal yielded 11.7 W of continuous‐wave output power for 23.5 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 66.6%. Furthermore, 5.9 W 458 nm deep‐blue light was acquired by frequency doubling, resulting in an opticalto‐optical efficiency with respect to the absorbed pump power of 25.1%. Comparative results obtained for the pump with diode laser at 809 nm, into the highly‐absorbing 4F5/2 level, are given in order to prove the advantages of the in‐band pumping. (© 2010 by Astro Ltd., Published exclusively by WILEY‐VCH Verlag GmbH & Co. KGaA)