Growth, structure and properties of thin monocrystalline InSb films grown by recrystallization in a narrow gap

Abstract

The results of investigation of recrystallization kinetics of ( 5 500 A) InSb films are described with the aid of a laser refractometer. The thermodynamic process characteristic considered to the gap thickness and substrate material are investigated. It was revealed that the method of producing a protective SiO, coating greatly affects the electric properties of InSb films. B p a 6 o~e