GROWTH TEMPERATURE DEPENDENCE OF Ga<sub>2</sub>O<sub>3</sub> THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

Liu, G. X.; Shan, Fukai; Lee, W. J.; Shin, Byoungchul; Kim, S. C.; Kim, H. S.; Cho, C. R.

doi:10.1080/10584580701755716

Cited by 23 publications

(20 citation statements)

References 13 publications

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“…Eqs. (15) and 17should give straight lines for the data of downward-curvature region in the forward-bias I-V characteristic. Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…As known, growth techniques are crucial to obtain quality thin films. Variety of thin film deposition methods such as sol-gel method [8], metal-organic chemical vapour deposition (MOCVD) [9], sputtering, pulsed laser depositon [10], molecular beam epitaxy [11,12], and atomic layer deposition technique (ALD) [13][14][15][16][17][18] have been used to achieve better quality of b-Ga 2 O 3 thin films. Unlike other physical vapor deposition (PVD) or chemical vapour deposition (CVD) methods, ALD is based on the saturative surface reactions, which results in a self-limiting growth mechanism.…”

Section: Introductionmentioning

confidence: 99%

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Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Alloys and Compounds

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In this work, 7.5 nm Ga2O3 dielectric thin films have been deposited on p-type (1 1 1) silicon wafer using plasma enhanced atomic layer deposition (PEALD) technique. After the deposition, Ga2O 3 thin films were annealed under N2 ambient at 600, 700, and 800 C to obtain β-phase. The structure and microstructure of the β-Ga2O3 thin films was carried out by using grazing-incidence X-ray diffraction (GIXRD). To show effect of annealing temperature on the microstructure of β-Ga2O3 thin films, average crystallite size was obtained from the full width at half maximum (FWHM) of Bragg lines using the Scherrer formula. It was found that crystallite size increased with increasing annealing temperature and changed from 0.8 nm to 9.1 nm with annealing. In order to perform electrical characterization on the deposited films, Al/β-Ga2O3/p-Si metal-oxide- semiconductor (MOS) type Schottky barrier diodes (SBDs) were fabricated using the β-Ga2O3 thin films were annealed at 800 C. The main electrical parameters such as leakage current level, reverse breakdown voltage, series resistance (RS), ideality factor (n), zero-bias barrier height (Bo), and interface states (NSS) were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The RS values were calculated by using Cheung methods. The energy density distribution profile of the interface states as a function of (ESS-EV) was obtained from the forward bias I-V measurements by taking bias dependence of ideality factor, effective barrier height (e), and RS into account. Also using the Norde function and C-V technique, e values were calculated and cross-checked. Results show that β-Ga2O3 thin films deposited by PEALD technique at low temperatures can be used as oxide layer for MOS devices and electrical properties of these devices are influenced by some important parameters such as NSS, RS, and β-Ga2O3 oxide layer. © 2014 Elsevier B.V. All rights reserved

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“…Eqs. (15) and 17should give straight lines for the data of downward-curvature region in the forward-bias I-V characteristic. Table 1.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Alloys and Compounds

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“…SiO 2 formation at the metal-oxide/Si interface was also reported in literature. 15,26 It occurs due to the susceptibility of Si substrate to oxidation, and the thickness of SiO 2 increases with increasing annealing temperatures. In order to obtain information about the thicknesses of interfacial SiO 2 and b-Ga 2 O 3 layers, cross-sectional HR-TEM imaging was performed ( Fig.…”

Section: A Film Structure and Capacitance-voltage Characteristicsmentioning

confidence: 99%

“…7 Over the last decade, Ga 2 O 3 thin films have been deposited using various techniques such as sputtering, 8 pulsed laser deposition, 9 sol-gel method, 10 molecular beam epitaxy, 11,12 metal-organic chemical vapor deposition, 13 electron beam evaporation, 14 and atomic layer deposition (ALD). 4,[15][16][17][18][19] As the film thicknesses scaled down to nanometers for industrial applications, an extensive search has begun for a suitable deposition technique. In this regard, ALD has distinguished itself with its ability to deposit ultrathin films with an excellent uniformity over large substrates.…”

Section: Introductionmentioning

confidence: 99%

“…Alternative ALD/PEALD a) Electronic mail: altunhalit@gmail.com b) Electronic mail: biyikli@unam.bilkent.edu.tr processes that use different precursor combinations were also studied for the deposition of Ga 2 O 3 films. [15][16][17][18][19][20] Recently, we have reported on the PEALD of Ga 2 O 3 thin films using trimethylgallium (TMG) and O 2 plasma. 18 Here we studied the effect of postdeposition annealing on the electrical characteristics of PEALD-grown b-Ga 2 O 3 films using current-voltage (I-V) and high-frequency capacitancevoltage (C-V) measurements at room temperature.…”

Section: Introductionmentioning

confidence: 99%

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Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Altuntaş

Dönmez

Özgit-Akgün

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga2O3 thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900 °C for 30 min under N2 ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga2O3 thin films were then investigated by fabricating and characterizing Al/β-Ga2O3/p-Si metal–oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Qeff) were calculated from the capacitance–voltage (C-V) curves using the flat-band voltage shift and were found as 2.6 × 1012, 1.9 × 1012, and 2.5 × 1012 cm−2 for samples annealed at 700, 800, and 900 °C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO2 layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900 °C, and by the Frenkel–Poole emission model for film annealed at 800 °C. Leakage current density was found to improve with annealing temperature. β-Ga2O3 thin film annealed at 800 °C exhibited the highest reverse breakdown field value.

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High-insulating β-Ga2O3 thin films by doping with a valence controllable Fe element

Huang

Zhi

et al. 2018

Appl. Phys. A

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GROWTH TEMPERATURE DEPENDENCE OF Ga₂O₃ THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

Cited by 23 publications

References 13 publications

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

High-insulating β-Ga2O3 thin films by doping with a valence controllable Fe element

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GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

Cited by 23 publications

References 13 publications

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

High-insulating β-Ga2O3 thin films by doping with a valence controllable Fe element

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GROWTH TEMPERATURE DEPENDENCE OF Ga₂O₃ THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION