2011
DOI: 10.1088/1757-899x/23/1/012026
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Growth temperature influence on the GaN nanowires grown by MOVPE technique

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“…Gallium Nitride (GaN) has now been widely used for high electron mobility transistors (HEMT) due to its high mobility and also because of its wide bandgap which endows it the property of high breakdown voltage and allows it to be used for high voltage applications [8][9]. GaN nanowires have been in fabrication processes for a long time [10][11] and been used for photo-detection and photoluminescence applications [12][13]. Extensive research has been done in the area of employing GaN to nanodevices and FET's [14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…Gallium Nitride (GaN) has now been widely used for high electron mobility transistors (HEMT) due to its high mobility and also because of its wide bandgap which endows it the property of high breakdown voltage and allows it to be used for high voltage applications [8][9]. GaN nanowires have been in fabrication processes for a long time [10][11] and been used for photo-detection and photoluminescence applications [12][13]. Extensive research has been done in the area of employing GaN to nanodevices and FET's [14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%